SSM3K116TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. MaxUnitV I = ..
SSM3K119TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitV I = ..
SSM3K121TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 1Characteristics Symbol Rating Unit 32Drain-Source voltage V 2 ..
SSM3K123TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 1Characteristics Symbol Rating Unit 32Drain-Source voltage V 2 ..
SSM3K124TU ,Small-signal MOSFET
SSM3K127TU ,Small-signal MOSFET
STB200NF03T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STB200NF04 ,N-CHANNEL 40VFeatures Figure 1: PackageType V R I PwDSS DS(on) DSTB200NF04 40 V < 0.0037 Ω 120 A 310 WSTB200NF04 ..
STB200NF04T4 ,N-CHANNEL 40VAbsolute Maximum ratings Symbol Parameter Value UnitV Drain-source Voltage (V = 0) 40 VDS GSV Drai ..
STB20NK50Z ,N-CHANNEL 500VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STB20NK50Z-S ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)500 VDS GSV Drain-g ..
STB20NK50ZT4 ,N-CHANNEL 500VSTP20NK50Z - STW20NK50ZSTB20NK50Z - STB20NK50Z-S2 2N-CHANNEL 500V -0.23Ω - 17A TO-220/D PAK/I SPAK/ ..
SSM3K116TU
Small-signal MOSFET
SSM3K116TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K116TU High Speed Switching Applications • 2.5V drive
• Low on-resistance: Ron = 135mΩ (max) (@VGS = 2.5 V)
Ron = 100mΩ (max) (@VGS = 4.5 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on ceramic board.
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2 )
Note 2: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C) Note3: Pulse test
Unit: mm
Weight: 6.6 mg (typ.)
