| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| SSM3K04FV |
TOSHIBA|TOSHIBA |
N/a |
48000 |
 |
High Speed Switching Applications |
| SSM3K04FV |
TOS|TOSHIBA |
N/a |
7930 |
|
High Speed Switching Applications |
SSM3K05FU TOSH,Applications Unit: mm Small package Low on resistance : R = 0.8 Ω max (@V = 4 V) on GS : R = 1.2 Ω max (@V = 2.5 V) on GS Low gate thresho ..
SSM3K05FU TOSHIBA,Applications Unit: mm Small package Low on resistance : R = 0.8 Ω max (@V = 4 V) on GS : R = 1.2 Ω max (@V = 2.5 V) on GS Low gate thresho ..
SSM3K04FV , High Speed Switching Applications
SSM3K05FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsSSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU High Speed Switc ..
SSM3K09FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low on resistance : R = 0.7 Ω (max) (@V = 10 V) on GS ..
SSM3K104TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitV I = ..
SSM3K116TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. MaxUnitV I = ..
STB16PF06L ,P-CHANNEL 60VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STB16PF06LT4 ,P-CHANNEL 60VELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: On/OffSymbol Parameter ..
STB170NF04 ,N-channel 40 V, 4.4 mOhm typ., 80 A STripFET(TM) II Power MOSFET in a D2PAK packageElectrical characteristics(T =25°C unless otherwise specified).CASETable 4. On/offSymbol Parameter ..
