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Partno	Mfg	Dc	Qty	Available	Descript
SSM3K04FS	TOSHIBA	N/a	76000	avai	Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications

SSM3K04FS ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm
 With built-in gate-source resistor: R = 1 MΩ (typ.) GS
 2.5 V gate driv ..
SSM3K04FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm
 With built-in gate-source resistor: R = 1 MΩ (typ.) GS
 2.5 V gate driv ..
SSM3K04FV , High Speed Switching Applications
SSM3K04FV , High Speed Switching Applications
SSM3K05FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsSSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU High Speed Switc ..
SSM3K09FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm
 Small package
 Low on resistance : R = 0.7 Ω (max) (@V = 10 V) on GS ..
STB16NK65Z-S ,N-CHANNEL 650 VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTP16NK65Z 650 V < 0.50 Ω 13 A 190 WSTB16NK65Z- ..
STB16NS25 ,N-CHANNEL 250VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 250 VDS GSV Drain- ..
STB16NS25T4 ,N-CHANNEL 250VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 250 VDS GSV Drain- ..
STB16PF06L ,P-CHANNEL 60VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STB16PF06LT4 ,P-CHANNEL 60VELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: On/OffSymbol Parameter ..
STB170NF04 ,N-channel 40 V, 4.4 mOhm typ., 80 A STripFET(TM) II Power MOSFET in a D2PAK packageElectrical characteristics(T =25°C unless otherwise specified).CASETable 4. On/offSymbol Parameter ..

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SSM3K04FS
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
SSM3K04FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K04FS
High Speed Switch Applications With built-in gate-source resistor: RGS = 1 MΩ (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package
Maximum Ratings (Ta ��� � 25°C)
Marking Equivalent Circuit
Unit: mm
Weight: 2.4 mg (typ.)

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