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Partno	Mfg	Dc	Qty	Available	Descript
SSM3K03FE	TOSHIBA	N/a	385200	avai	Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications

SSM3K03FE ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications
 2.5 V gate drive
 High input impedance
 Low gate threshold voltage: V = 0.7~ ..
SSM3K04FS ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm
 With built-in gate-source resistor: R = 1 MΩ (typ.) GS
 2.5 V gate driv ..
SSM3K04FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm
 With built-in gate-source resistor: R = 1 MΩ (typ.) GS
 2.5 V gate driv ..
SSM3K04FV , High Speed Switching Applications
SSM3K04FV , High Speed Switching Applications
SSM3K05FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsSSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU High Speed Switc ..
STB160NF3LLT4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STB16NB25 , N - CHANNEL 250V - 0.220ohm - 16A - TO-263 PowerMESH] MOSFET
STB16NF06L ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STB16NF06LT4 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STB16NK65Z-S ,N-CHANNEL 650 VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTP16NK65Z 650 V < 0.50 Ω 13 A 190 WSTB16NK65Z- ..
STB16NS25 ,N-CHANNEL 250VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 250 VDS GSV Drain- ..

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SSM3K03FE
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K03FE
High Speed Switching Applications
Analog Switch Applications 2.5 V gate drive High input impedance Low gate threshold voltage: Vth = 0.7~1.3 V Small package
Maximum Ratings (Ta ��� � 25°C)
Marking Equivalent Circuit
Unit: mm
Weight: 2.3 mg (typ.)

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