SSM3K01F ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low on resistance : Ron = 120 mΩ (max) (V = 4 V) GS : ..
SSM3K01T ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small Package Low on Resistance : R = 120 mΩ (max) (@V = 4 V) on GS ..
SSM3K02F ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low on resistance : R = 200 mΩ (max) (V = 4 V) on GS : ..
ssm3k02f ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsSSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switchi ..
SSM3K02T , High Speed Switching Applications
SSM3K03FE ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications 2.5 V gate drive High input impedance Low gate threshold voltage: V = 0.7~ ..
STB14NK60ZT4 ,N-CHANNEL 600VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STB150NF55 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 55 VV Drain- ..
STB150NF55T4 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 55 VV Drain- ..
STB15NK50Z ,N-CHANNEL 500V 0.30 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP15NK50ZSTB15NK50Z STP15NK50ZFP STW15NK50ZSTB1 ..
STB15NK50ZT4 ,N-CHANNEL 500V 0.30 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP15NK50ZSTB15NK50Z STP15NK50ZFP STW15NK50ZSTB1 ..
STB160N75F3 ,N-channel 75 V, 3.2 mOhm typ., 120 A STripFET(TM) Power MOSFET in D2PAK packageAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 75 VDS GSV Gate-s ..
SSM3K01F
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
SSM3K01F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K01F High Speed Switching Applications Small package Low on resistance : Ron = 120 mΩ (max) (VGS = 4 V) : Ron = 150 mΩ (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)
Maximum Ratings (Ta ��� � 25°C)
Marking Equivalent Circuit
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 0.012 g (typ.)
