SSM3J56MFV ,Small-signal MOSFETabsolute maximum ratings. Weight: 1.5mg (typ.) Please design the appropriate reliability upon revie ..
SSM3K01F ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low on resistance : Ron = 120 mΩ (max) (V = 4 V) GS : ..
SSM3K01T ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small Package Low on Resistance : R = 120 mΩ (max) (@V = 4 V) on GS ..
SSM3K02F ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low on resistance : R = 200 mΩ (max) (V = 4 V) on GS : ..
ssm3k02f ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsSSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switchi ..
SSM3K02T , High Speed Switching Applications
STB14NK60Z ,N-CHANNEL 600VSTP14NK60Z - STP14NK60ZFPSTB14NK60Z - STB14NK60Z-1 - STW14NK60Z2 2N-CHANNEL 600V-0.45Ω-13.5A TO-220 ..
STB14NK60ZT4 ,N-CHANNEL 600VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STB150NF55 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 55 VV Drain- ..
STB150NF55T4 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 55 VV Drain- ..
STB15NK50Z ,N-CHANNEL 500V 0.30 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP15NK50ZSTB15NK50Z STP15NK50ZFP STW15NK50ZSTB1 ..
STB15NK50ZT4 ,N-CHANNEL 500V 0.30 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP15NK50ZSTB15NK50Z STP15NK50ZFP STW15NK50ZSTB1 ..
SSM3J56MFV
Small-signal MOSFET
SSM3J56MFV TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J56MFV Load Switching Applications 1.2 V drive Low ON-resistance: RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V)
RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.585 mm2)
Note 3: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking Equivalent Circuit (top view)
Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and Power dissipation PD vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration.
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