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SSM3J36MFV
Small-signal MOSFET
SSM3J36MFV
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J36MFV Power Management Switches
• 1.5-V drive Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V)
: Ron = 2.70 Ω (max) (@VGS = -1.8 V)
: Ron = 1.60 Ω (max) (@VGS = -2.8 V)
: Ron = 1.31 Ω (max) (@VGS = -4.5 V)
Absolute Maximum Ratings (Ta = 25 °C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/
“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Note1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.585 mm2)
Marking Equivalent Circuit (top view)
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below −1 mA for the
SSM3J36MFV). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Unit: mm
Weight: 1.5 mg (typ.) 2 2
