SSM3J326T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) ２３Characteristic Symbol Rating Unit V -30 V Drain-source volta ..
SSM3J327F ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage V -20 V ..
SSM3J327R ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 2.9±0.2ACharacteristic Symbol Rating Unit Drain-source voltage ..
SSM3J328R ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 0.95 0.95Characteristic Symbol Rating Unit 2.9±0.2ADrain-sourc ..
SSM3J332R ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 2.9±0.2ACharacteristic Symbol Rating Unit Drain-Source voltage ..
SSM3J334R ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 0.95 0.95Characteristic Symbol Rating Unit 2.9±0.2ADrain-Sourc ..
STB130NS04ZBT4 ,N-CHANNEL CLAMPEDAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) CLAMPED VDS GSVDr ..
STB13NK60Z ,N-CHANNEL 600VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PF ..
STB13NK60Z-1 ,N-CHANNEL 600Vapplications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutiona ..
STB13NK60ZT4 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP13NK60ZSTB13NK60Z/-1 STP13NK60ZFPSTW13NK60ZV ..
STB140NF75 ,N-CHANNEL 75VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 75 VDS GSV Drain- ..
STB141NF55 , N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET™ II Power MOSFET
SSM3J326T
Small-signal MOSFET
SSM3J326T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J326T Power Management Switch Applications • 1.8-V drive Low ON-resistance: RDS(ON) = 115 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 62.5 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 45.7 mΩ (max) (@VGS = -4.5 V)
RDS(ON) = 39.3 mΩ (max) (@VGS = -10 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking Equivalent Circuit (top view) Unit: mm
Weight: 10 mg (typ.)
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