SSM3J16CT ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIN. TYP. MAX.UNITGate ..
SSM3J16FS ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIN. TYP. MAX.UNITGate ..
SSM3J16FU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIN. TYP. MAX.UNITGate ..
SSM3J16FV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIN. TYP. MAX.UNITGate ..
SSM3J304T ,Small-signal MOSFETabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
SSM3J305T ,Small-signal MOSFETabsolute maximum ratings. Please design the appropriate reliability upon reviewing the JEITA ― Tosh ..
STB120NF10T4 ,N-CHANNEL 100VAPPLICATIONS■ AUDIO AMPLIFIERS■ POWER TOOLSOrdering InformationSALES TYPE MARKING PACKAGE PACKAGING ..
STB120NH03LT4 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB12NK80Z ,N-CHANNEL 800V 0.65 OHM 10.5A TO-220/D2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STB12NK80ZT4 ,N-CHANNEL 800V 0.65 OHM 10.5A TO-220/D2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)800 VDS GSV Drain-g ..
STB12NM50 ,N-CHANNEL 500VSTP12NM50 - STP12NM50FPSTB12NM50 - STB12NM50-12 2N-CHANNEL 500V - 0.30Ω - 12A TO-220/FP/D PAK/I PAK ..
STB12NM50FDT4 ,N-CHANNEL 500V 0.32 OHM 12A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 FDMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitTO-220 / TO-220FP TO-2472 2D PAK / I PAKV Drain- ..
SSM3J16CT
Small-signal MOSFET
SSM3J16CT TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)
SSM3J16CT High Speed Switching Applications
Analog Switch Applications Small package Low on-resistance : RDS(ON) = 8 Ω (max) (@VGS = −4 V)
: RDS(ON) = 12 Ω (max) (@VGS = −2.5 V)
: RDS(ON) = 45 Ω (max) (@VGS = −1.5 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm2)
Marking (Top View) Pin Condition (Top View) Equivalent Circuit
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight :0.75 mg (typ.)
1. Gate2. Source 3. Drain *Electrodes: On the bottom
Polarity mark Polarity mark (on the top)
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