Partno |
Mfg |
Dc |
Qty |
Available | Descript |
SSM3J110TU |
TOSHIBA|TOSHIBA |
N/a |
50830 |
|
Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications |
SSM3J110TU , Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications
SSM3J112TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 1Drain-Source voltage V −30 ..
SSM3J113TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 1Characteristic Symbol Rating Unit 32Drain-Source voltage V −2 ..
SSM3J115TU ,Small-signal MOSFETApplications Unit: mm 2.1±0.1• 1.5 V drive • Low ON-resistance: R = 353 mΩ (max) (@V = −1.5 V) 1.7 ..
SSM3J120TU ,Small-signal MOSFETabsolute maximum ratings. Weight: 6.6mg (typ.) Please design the appropriate reliability upon revie ..
STB1188 , PNP Silicon Transistor
STB1188 , PNP Silicon Transistor
STB11NB40 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTB11NB40N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTB11NB40 400 V < 0.55 ..