SSM3J01F ,Field Effect Transistor Silicon P Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low on resistance : Ron = 0.4 Ω (max) (V = −4 V) GS : ..
SSM3J01T ,Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching ApplicationsApplications Small Package Low on Resistance : R = 0.4 Ω (max) (@V = −4 V) on GS : R = 0. ..
SSM3J02F ,Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching ApplicationsApplications Small package Low on resistance : R = 0.5 Ω (max) (@V = −4 V) on GS : R = 0. ..
SSM3J02T ,Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching ApplicationsApplications Component package suitable for high-density mounting Small Package Low ON ..
SSM3J05FU ,Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching ApplicationsSSM3J05FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J05FU Power Management ..
SSM3J09FU ,Field Effect Transistor Silicon P Channel MOS Type Management Switch High Speed Switching ApplicationsSSM3J09FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J09FU Management Switc ..
STB10NK60Z ,N-CHANNEL 600VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND P ..
STB10NK60Z-1 ,N-CHANNEL 600VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STB1188 , PNP Silicon Transistor
STB1188 , PNP Silicon Transistor
STB11NB40 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTB11NB40N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTB11NB40 400 V < 0.55 ..
STB11NB40T4 ,N-CHANNEL 400VAbsolute Maximum RatingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 400 VDS GSV Drain ..
SSM3J01F
Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications
SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J01F High Speed Switching Applications Small package Low on resistance : Ron = 0.4 Ω (max) (VGS = −4 V) : Ron = 0.6 Ω (max) (VGS = −2.5 V) Low gate threshold voltage
Maximum Ratings (Ta ��� � 25°C)
Marking Equivalent Circuit
Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 0.012 g (typ.)
