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SSM2019ADN/a6avaiSelf-Contained Audio Preamplifier


SSM2019 ,Self-Contained Audio PreamplifierSPECIFICATIONS apply at T = 25°C.)AParameter Symbol Conditions Min Typ Max UnitDISTORTION PERFORMAN ..
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SSM2019
Self-Contained Audio Preamplifier
PRELIMINARY TECHNICAL DATA
REV. PrE 8/30/2002
Self-Contained
Audio Preamplifier
FUNCTIONAL BLOCK DIAGRAM
GENERAL DESCRIPTION
The SSM2019 is a latest generation audio preamplifier, combiningSSM preamplifier design expertise with advanced processing.The result is excellent audio performance from a monolithicdevice, requiring only one external gain set resistor orpotentiometer. The SSM2019 is further enhanced by itsunity gain stability.
Key specifications include ultralow noise (1.5 dB noise figure)and THD (<0.01% at G = 100), complemented by wide band-width and high slew rate.
Applications for this low-cost device include microphone pream-plifiers and bus summing amplifiers in professional and consumeraudio equipment, sonar, and other applications requiring a lownoise instrumentation amplifier with high gain capability.
FEATURES
Excellent Noise Performance: 950 pV/√Hz or 1.5 dB
Noise Figure
Ultralow THD: < 0.01% @ G = 100 Over the Full Audio
Band
Wide Bandwidth: 1 MHz @ G = 100High Slew Rate: 20 V/us (Typical)
Unity Gain Stable
True Differential Inputs
Subaudio 1/f Noise Corner
8-Pin Mini-DIP or 16-Pin SOIC
Only One External Component Required
Very Low Cost
Extended Temperature Range: –40�C to +85�C
APPLICATIONS
Audio Mix Consoles
Intercom/Paging Systems
Two-Way Radio
Sonar
Digital Audio Systems
PIN CONNECTIONS
8-Pin PDIP (N Suffix)
16-Pin Wide Body SOIC (RW Suffix)
+IN
PRELIMINARY TECHNICAL DATA
SSM2019–SPECIFICATIONS (VS = ±15 V and –40°C < TA < +85°C, unless otherwise noted. Typical specificationsapply at TA = 25°C.)

DISTORTION PERFORMANCE
NOISE PERFORMANCE
DYNAMIC RESPONSE
INPUT
OUTPUT
GAIN
PRELIMINARY TECHNICAL DATA
SSM2019
ABSOLUTE MAXIMUM RATINGS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±19 VInput Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .Supply VoltageOutput Short Circuit Duration . . . . . . . . . . . . . . . . . . . 10 secStorage Temperature Range (P, Z Packages) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°CJunction Temperature (TJ) . . . . . . . . . . . . . –65°C to +150°CLead Temperature Range (Soldering, 60 sec) . . . . . . . . 300°COperating Temperature Range . . . . . . . . . . . –40°C to +85°CThermal Resistance*
8-Lead Plastic DIP (P):θJA = 96; θJC = 37 . . . . . . . . °C/W16-Lead SOIC (S):θJA = 92; θJC = 27 . . . . . . . . . . . . °C/W
*θJA is specified for worst-case mounting conditions, i.e., θJA is specified for device
in socket for plastic DIP; θJA is specified for device soldered to printed
circuit board for SOL package.
ORDERING GUIDE

TPC 1. Typical THD + Noise* at G = 1, 10, 100, 1000;
VO = 7 V rms, VS = ±15 V, RL = 5 kΩ; TA = 25°C
*80 kHz low-pass filter used for TPCs 1 and 2.
TPC 2. Typical THD + Noise* at G = 2, 10, 100, 1000;
VO = 10 V rms, VS = ±18 V, RL = 5 kΩ; TA = 25°C
CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the SSM2019 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
Typical Performance Characteristics
PRELIMINARY TECHNICAL DATA
SSM2019

TPC 3.Voltage Noise Density vs.
Frequency

TPC 6.Maximum Output Swing vs.
Frequency
TPC 9.Output Voltage Range vs.
Supply Voltage
TPC 4.RTI Voltage Noise Density
vs. Gain
TPC 7.Maximum Output Voltage vs.
Load Resistance
TPC 10.CMRR vs. Frequency
TPC 5. Output Impedance vs.
Frequency
TPC 8.Input Voltage Range vs.
Supply Voltage
TPC 11.+PSRR vs. Frequency
PRELIMINARY TECHNICAL DATA
TPC 12.–PSRR vs. Frequency
TPC 15.VOOS vs. Temperature

TPC 18.IB vs. Supply Voltage
TPC 13.VIOS vs. Temperature
TPC16.VOOS vs. Supply Voltage
TPC 19.ISY vs. Temperature
TPC 14.VIOS vs. Supply Voltage
TPC 17.IB vs. Temperature

TPC 20.ISY vs. Supply Voltage
PRELIMINARY TECHNICAL DATA
SSM2019

Figure 1.Basic Circuit Connections
GAIN
The SSM2019 only requires a single external resistor to set thevoltage gain. The voltage gain, G, is:
and
For convenience, Table I lists various values of RG for commongain levels.
Table I.Values of RG for Various Gain Levels

The voltage gain can range from 1 to 3500. A gain set resistoris not required for unity gain applications. Metal-film or wire-wound resistors are recommended for best results.
The total gain accuracy of the SSM2019 is determined by thetolerance of the external gain set resistor, RG, combined with thegain equation accuracy of the SSM2019. Total gain drift com-bines the mismatch of the external gain set resistor drift withthat of the internal resistors (20 ppm/°C typ).
Bandwidth of the SSM2019 is relatively independent of gain asshown in Figure 2. For a voltage gain of 1000, the SSM2019has a small-signal bandwidth of 200 kHz. At unity gain, thebandwidth of the SSM2019 exceeds 4 MHz.
Figure 2.Bandwidth for Various Values of Gain
NOISE PERFORMANCE
The SSM2019 is a very low noise audio preamplifier exhibitinga typical voltage noise density of only 1 nV/√Hz at 1 kHz. Theexceptionally low noise characteristics of the SSM2019 are inpart achieved by operating the input transistors at high collectorcurrents since the voltage noise is inversely proportional to thesquare root of the collector current. Current noise, however, isdirectly proportional to the square root of the collector current.As a result, the outstanding voltage noise performance of theSSM2019 is obtained at the expense of current noise perfor-mance. At low preamplifier gains, the effect of the SSM2019’svoltage and current noise is insignificant.
The total noise of an audio preamplifier channel can be calcu-lated by:
where:
En = total input referred noise
en = amplifier voltage noise
in = amplifier current noise
RS = source resistance
et = source resistance thermal noise.
For a microphone preamplifier, using a typical microphoneimpedance of 150 Ω the total input referred noise is:
en = 1 nV/√Hz @ 1 kHz, SSM2019 en
in = 2 pA/√Hz @ 1 kHz, SSM2019 in
RS = 150 Ω, microphone source impedance
et = 1.6 nV/√Hz @ 1 kHz, microphone thermal noise
This total noise is extremely low and makes the SSM2019virtually transparent to the user.
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