SSH10N60A ,BV(dss): 600V / R(ds): 0.8Ohm / I(d): 10A / advanced power MOSFETFEATURESBV = 600 VDSS Avalanche Rugged TechnologyR = 0.8 ΩDS(on) Rugged Gate Oxide Te ..
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SSH10N60A
BV(dss): 600V / R(ds): 0.8Ohm / I(d): 10A / advanced power MOSFET
(Max.) @ VDS = 600V (Typ.)
Advanced Power MOSFET
Thermal Resistance
FEATURES
Absolute Maximum Ratings
SSH10N60A©1999
Rev. B
