SS33 ,Schottky RectifiersSS32-S310SS32 - S310
SS34 ,Schottky RectifiersThermal Characteristics (TA = 25°C unless otherwise noted)Parameter Symbol SS32 SS33 SS34 SS35 SS36 ..
SS34 A , Surface Mount Schottky Barrier Rectifier Reverse Voltage 20 to 100 V Forward Current 3.0 A
SS34A , Surface Mount Schottky Barrier Rectifier Reverse Voltage 20 to 100 V Forward Current 3.0 A
SS34-A , Surface Mount Schottky Barrier Rectifier Reverse Voltage 20 to 100 V Forward Current 3.0 A
SS34B , Surface Mount Schottky Barrier Rectifier Reverse Voltage 20 to 150 V Forward Current 3.0 A
ST7FDALIF2M6 ,8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI, DALI (DATA BRIEFING)ST7FLITE28-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY,DATA EEPROM, ADC, TIMERS, SPIDATA BRIEFING■ Mem ..
ST7FL09Y0MA , 8-bit MCU for automotive with single voltage Flash memory, data EEPROM, ADC, timers, SPI
ST7FLCD1G9M1 ,60 KBYTE FLASH 8-BIT MCU FOR LCD MONITORS WITH 2K RAM, 8-BIT ADC, TIMER, PWMS, 2 DDC, I2C, IFRfeatures also include true bit manipulation, 8x8 unsigned multiplication and indirect addressing ■ ..
ST7FLI49MK1T6 ,8-bit MCUfeatures . . . . . . 286.3 CPU registers . . . . . . 286.3.1 Accumulator (A) . . . ..
ST7FLIT15BF1B6 ,8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, 5 TIMERS, SPIfeatures FLASH memory withmodes.byte-by-byte In-Circuit Programming (ICP) and In-Application Progra ..
ST7FLIT15BF1B6 ,8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, 5 TIMERS, SPIST7LITE1xB8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY,DATA EEPROM, ADC, 5 TIMERS, SPI■ Memories– up ..
SS33
Schottky Rectifiers
SS32-S310 SS32 - S310 Features • Metal to silicon rectifiers, majority carrier conduction. • Low forward voltage drop. • Easy pick and place. SMC/DO-214AB • High surge current capability. COLOR BAND DENOTES CATHODE Schottky Rectifiers Absolute Maximum Ratings* T = 25°C unless otherwise noted A Value Symbol Parameter Units 32 33 34 35 36 38 39 310 V Maximum Repetitive Reverse Voltage 20 30 40 50 60 80 90 100 V RRM I Average Rectified Forward Current, @ T = 75°C 3.0 A F(AV) A I Non-repetitive Peak Forward Surge Current FSM 100 A 8.3 ms Single Half-Sine-Wave Storage Temperature Range -55 to +150 T °C stg T Operating Junction Temperature -55 to +150 °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 2.27 W D R Thermal Resistance, Junction to Ambient * 55 C/W ° θJA R Thermal Resistance, Junction to Lead 17 °C/W θJL *Device mounted on FR-4 PCB 0.55 x 0.55" (14 x 14 mm). Electrical Characteristics T = 25°C unless otherwise noted A Device Symbol Parameter Units 32 33 34 35 36 38 39 310 V Forward Voltage @ 3.0 A 500 750 850 mV F I 0.5 mA R Reverse Current @ rated V T = 25°C R A T = 100°C A 20 10 mA 2001 SS32 - S310, Rev. D
