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SPW47N60C3INTESILN/a269avaifor lowest Conduction Losses & fastest Switching


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SPW47N60C3
for lowest Conduction Losses & fastest Switching
SPW47N60C3
Cool MOS™ Power Transistor
Feature

• New revolutionary high voltage technology
• Worldwide best R
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
P-TO247
Maximum Ratings
SPW47N60C3
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at Tj=25°C unless otherwise specified
SPW47N60C3
Gate Charge Characteristics
Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPW47N60C3
Typical Transient Thermal Characteristics
SPW47N60C3
1 Power dissipation
tot = f (TC)
50
100
150
200
250
300
350
400
500 SPW47N60C3
tot
2 Safe operating area
D = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10 10 10
3 Transient thermal impedance
thJC = f (tp)
parameter: D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
4 Typ. output characteristic
D = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
40
80
120
160
200
280
SPW47N60C3
5 Typ. output characteristic
D = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
20
40
60
80
100
120
160
6 Typ. drain-source on resistance
DS(on)=f(ID)
parameter: Tj=150°C, VGS
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.5
(on)
7 Drain-source on-state resistance
DS(on) = f (Tj)
parameter : ID = 47 A, VGS = 10 V
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32 SPW47N60C3
DS(on)
8 Typ. transfer characteristics
D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
40
80
120
160
200
280
SPW47N60C3
9 Typ. gate charge
GS = f (QGate)
parameter: ID = 47 A pulsed
10
12
16 SPW47N60C3
10 Forward characteristics of body diode
F = f (VSD)
parameter: T10 10 10 10
11 Typ. drain current slope

di/dt = f(RG), inductive load, Tj = 125°C
par.: VDS=380V, VGS=0/+13V, ID=47A
1000
2000
3000
4000
6000
12 Typ. switching time

t = f (RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=47 A10 10 10 10
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