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SPW35N60C3Infineon N/a1960avaifor lowest Conduction Losses & fastest Switching


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SPW35N60C3
for lowest Conduction Losses & fastest Switching
CP""''"
Infineon
lechnologies
CooIMOSTM Power Transistor
Features
. New revolutionary high voltage technology
. Ultra low gate charge
. Periodic avalanche rated
. Extreme dv/dt rated
. Ultra low effective capacitances
. Improved transconductance
SPW35N60C3
Product Summary
VDS @ Tj,max 650 V
RDS(on),max 0.1
l 34.6
Type Package Ordering Code Marking pln 1
SPW35N60C3 P-T0247 Q67040-S4673 35N60C3 :31qu
Maximum ratings, at Tj=25 "C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current In Tc=25 ''C 34.6 A
Tc=100 °C 21.9
Pulsed drain current" / D,pulse Tc=25 ''C 103.8
Avalanche energy, single pulse EAS ID=17.3 A, VDD=50 V 1500 mJ
Avalanche energy, repetitive tAR1)'2) E AR ID=34.6 A, VDD=50 V 1.5
Avalanche current, repetitive t ARI) IAR 34.6 A
. ID=34.6 A,
Drain source voltage slope dv/dt VDS=48O V, Tj=125 ''C 50 V/ns
Gate source voltage VGS static +20 V
VGS AC (f>1 Hz) E30
Power dissipation Ptot TC=25 ''C 313 W
Operating and storage temperature Ts, Tsta -55 150 'C
Rev. 1.0 page 1 2004-05-10
CP""''"
Infineon
lechnologies
SPW35N60C3
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case Rm - - 0.4 K/W
Thermal resistance, junction -
ambient RthJA leaded - - 62
. 1.6 mm (0.063 in.) o
Soldering temperature T50... from case for 10 s - - 260 C
Electrical characteristics, at Tj=25 'C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS Vss=0 V, ID=250 pA 600 - - V
Avalanche breakdown voltage V(SR)os b'ss=0 V, I D=34.6 A - 700 -
Gate threshold voltage VGS(th) VDS=VG31 /o=1.9 mA 2.1 3 3.9
. VDS=6OO V, Vss=0 V,
Zero gate voltage drain current loss - o - 0.1 1 pA
Ts=25 C
VDS=6OO V, Vss=0 V,
Tj=150 'C - - 100
Gate-source leakage current I GSS VGS=20 V, Vos=0 V - - 100 nA
. . VGS=10 V, ID=21.9 A,
Drain-source on-state resistance Rosmn) - o - 0.081 0.1 Q
Tr=25 C
VGS=10V, ID=21.9 A, 0.2
Tr=150 "C - . -
Gate resistance Rs f=1 MHz, open drain - 0.6 -
lVrosl>2llolRDson)max,
Transconductance " [0:219 A - 36 - s
Rev. 1.0 page 2 2004-05-10
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