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SPW15N60C3 Fast Delivery,Good Price
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SPW15N60C3 |SPW15N60C3Infineon N/a3000avaifor lowest Conduction Losses & fastest Switching


SPW15N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.28 ΩDS(on)• New revolutionary high voltage technologyI 15 AD• Ultra low gate chargeP-TO2 ..
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SPW17N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 0.29 ΩDS(on)• New revolutionary high voltage technologyI 17 AD• Worldwide best R in TO 247 ..
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SPW20N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.19 ΩDS(on)• New revolutionary high voltage technologyI 20.7 AD• Ultra low gate chargeP-T ..
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SPW15N60C3
for lowest Conduction Losses & fastest Switching
SPW15N60C3Final data
Cool MOS™ Power Transistor
Feature

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
P-TO247
Maximum Ratings
SPW15N60C3Final data
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at Tj=25°C unless otherwise specified
SPW15N60C3Final data
Gate Charge Characteristics
Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPW15N60C3Final data
Typical Transient Thermal Characteristics
SPW15N60C3Final data
1 Power dissipation
tot = f (TC)
20
40
60
80
100
120
140
170 SPW15N60C3
tot
2 Safe operating area
D = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10 10
3 Transient thermal impedance
thJC = f (tp)
parameter: D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
4 Typ. output characteristic
D = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
20
30
40
60
SPW15N60C3Final data
5 Typ. output characteristic
D = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
15
20
30
6 Typ. drain-source on resistance
DS(on)=f(ID)
parameter: Tj=150°C, VGS
0.4
0.6
0.8
1.2
1.4
1.8
(on)
7 Drain-source on-state resistance
DS(on) = f (Tj)
parameter : ID = 9.4 A, VGS = 10 V
0.2
0.4
0.6
0.8
1.2
1.6 SPW15N60C3
DS(on)
8 Typ. transfer characteristics
D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
20
30
40
60
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