SPW11N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 0.45 ΩDS(on)• New revolutionary high voltage technologyI 11 AD• Ultra low gate chargeP-TO2 ..
SPW12N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.38 ΩDS(on)• New revolutionary high voltage technologyI 11.6 AD• Ultra low gate chargeP-T ..
SPW15N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.28 ΩDS(on)• New revolutionary high voltage technologyI 15 AD• Ultra low gate chargeP-TO2 ..
SPW16N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.28 ΩDS(on)• New revolutionary high voltage technologyI 16 AD• Ultra low gate chargeP-TO2 ..
SPW17N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 0.29 ΩDS(on)• New revolutionary high voltage technologyI 17 AD• Worldwide best R in TO 247 ..
SPW20N60C2 ,for lowest Conduction Losses & fastest SwitchingFeatureProduct Summary• New revolutionary high voltage technologyVV 600DS• Ultra low gate chargeR 0 ..
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SPW11N80C3
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
SPW11N80C3Final data
Cool MOS Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
P-TO247
Maximum Ratings
SPW11N80C3Final data
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at Tj=25°C unless otherwise specified
SPW11N80C3Final data
Gate Charge CharacteristicsRepetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPW11N80C3Final data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Typical Transient Thermal Characteristics
SPW11N80C3Final data
1 Power dissipationtot = f (TC)
20
40
60
80
100
120
140
170 SPW11N80C3
tot
2 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10 10
3 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
4 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
SPW11N80C3Final data
5 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
6 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
15
20
25
35
7 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
12
14
18
8 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
1.2
1.4
1.6
1.8
2.2
2.4
2.6
on)
