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SPU08N10
N-Channel SIPMOS Power Transistor
Infineon
technologies
Preliminary Data
SIPMOS® Power Transistor SPD 08N10
Features Product Summary
. N channel Drain source voltage VDS 100 V
. Enhancement mode Drain-Source on-state resistance RDSWD 0.3 Q
. Avalanche rated Continuous drain current ko 8.4 A
o d v/dt rated
VPTOQOSW
Type Package Ordering Code Packaging Pin 1 Pin 2 Pin 3
SPD08N10 P-T0252 Q67040-S4126-A2 Tape and Reel G D S
SPUO8N10 P-T0251 Q67040-S4118-A2 Tube
Maximum Ratings, at Ti = 25 ''C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current ID A
To = 25 ( 8.4
To = 100 ( 5.4
Pulsed drain current leuIse 33.6
Tc = 25 (
Avalanche energy, single pulse EAS 3O mJ
ID = 8.4 A, VDD = 25 V, R33 = 25 Q
Avalanche energy, periodic limited by ijax EAR 4
Reverse diode dv/dt dv/dt 6 kV/ps
Is = 8.4 A, VDs = 80 V, di/dt= 200 Alps
Gate source voltage VGS I-20 V
Power dissipation Ptot 40 W
TC = 25 (
Operating and storage temperature T , Tstg -55... +175 (
IEC climatic category; DIN IEC 68-1 55/150/56
Data Sheet
tInfinleon SPD 08N10
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - 3 1 KNV
Thermal resistance, junction - ambient, leded RthJA - - 100
SMD version, device on PCB: RthJA
@ min. footprint - - 75
@ 6 cm2 cooling areal) - - 50
Electrical Characteristics, at Ti = 25 "C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage 1/(BR)DSS 100 - - V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = bbs Vesah) 2.1 3 4
ID = 1 mA
Zero gate voltage drain current IDSS pA
VDS=100V, VGS=0V, Tj=25°C - 0.1 1
VDs=100V, VGs=0V, 7j=125°C - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, bbs=OV'
Drain-Source on-state resistance RDS(On) Q
VGS = 10 V, ID = 5.4 A - 0.25 0.3
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2
