SPU04N60C3 ,Cool MOS Power TransistorFeatureR 0.95 ΩDS(on)• New revolutionary high voltage technologyI 4.5 AD• Ultra low gate chargeP-TO ..
SPU07N60C3 , Cool MOS Power Transistor
SPU08N10 ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage V 100 VDS• N channelDrain-Source on-state resistance 0.3R Ω• Enhanceme ..
SPU09N05 ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage V 55 - - V(BR)DSSV = 0 V, I = 0.25 mAGS D2.1 3 4Gate ..
SPU10N10 ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 100 VV• N channel DSDrain-Source on-state resistance 0.2R Ω• Enhanceme ..
SPU23N05 ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.05R Ω• Enhancemen ..
ST19AF08 ,SMARTCARD MCU WITH 4 ADDITIONAL I/OST19AF08CMOS MCU Based Safeguarded SMARTCARDWith 8 KBytes EEPROM DATA BRIEFPRODUCT
ST19AF08BR20QMAA ,CMOS MCU Based Safeguarded Smartcard With 8 KBytes EEPROMFEATURES Figure 1. Delivery Form ENHANCED 8 BIT CPU WITH EXTENDED ADDRESSING MODESSO20 32 KBYTES ..
ST19AF08BR-20QMAA ,CMOS MCU Based Safeguarded Smartcard With 8 KBytes EEPROMFEATURES INCLUDING EEPROM FLASH PROGRAM AND CLOCK MANAGEMENT 8 BIT TIMER WITH INTERRUPT CAPABILITY ..
ST1CL3H , PHOTOTRANSISTORS
ST-1CL3H , Photo transistors(high sensitivity NPN silicon phototransistor mounted)
ST1-DC12V , IC DRIVABLE PC BOARD RELAY FOR FIELD LOAD SWITCHING
SPU04N60C3
Cool MOS Power Transistor
SPD04N60C3
SPU04N60C3Final data
Cool MOS Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
Maximum Ratings
SPD04N60C3
SPU04N60C3Final data
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at Tj=25°C unless otherwise specified
SPD04N60C3
SPU04N60C3Final data
Gate Charge CharacteristicsRepetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPD04N60C3
SPU04N60C3Final data
Typical Transient Thermal Characteristics
SPD04N60C3
SPU04N60C3Final data
1 Power dissipationtot = f (TC)
10
15
20
25
30
35
40
45
55
SPD04N60C3
tot
2 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10 10
3 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
-3 10
-2 10
-1 10 10 10
thJC
4 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
12
16
SPD04N60C3
SPU04N60C3Final data
5 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
8.5
6 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
10
(on)
7 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 2.8 A, VGS = 10 V
0.5
1.5
2.5
3.5
4.5
5.5
SPD04N60C3
DS(on)
8 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
12
16
