SPB46N03L ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 30 VVDS• N channelDrain-Source on-state resistance 0.012R Ω• Enhanceme ..
SPB47N10 ,Low Voltage MOSFETsFeatureV100 VDS
SPB46N03L-SPP46N03L
N-Channel SIPMOS Power Transistor
( Infineon
technologies
SPP 46N03L
SIPMOS® Power Transistor
Features Product Summary
. N channel Drain source voltage VDS 30 V
. Enhancement mode Drain-Source on-state resistance RDS(0n) 0.012 n
q Avalanche rated Continuous drain current /D 46 A
q Logic Level
q d v/dt rated
. 175°C operating temperature
VPTOS164
VPT05155
Type Package Ordering Code Packaging Pin 1 Pin 2 Pin 3
SPP46N03L P-TO220-3-1 Q67040-S4147-A2 Tube G D S
SPB46N03L P-TO263-3-2 Q67040-S4743-A2 Tape and Reel
Maximum Ratings, at Ti = 25 "C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 °C, limited by bond wire 46
TC = 100 ( 44
Pulsed drain current IDpuIse 184
TC = 25 ''C
Avalanche energy, single pulse EAS 250 mJ
ID =46A, VDD=25V, RGS=25Q
Avalanche energy, periodic limited by Timax EAR 12
Reverse diode dv/dt dv/dt 6 kV/ps
ls = 46 A, VDS = 24 V, di/dt= 200 Alps,
ijax = 175 "C
Gate source voltage VGs $20 V
Power dissipation Ptot 120 W
TC = 25 ''C
Operating and storage temperature Ti, Tstq -55... +175 (
IEC climatic category; DIN IEC 68-1 55/175/56
Data Sheet
Infineon SPP 46N03L
technologies/
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 1.25 K/W
Thermal resistance, junction - ambient, leded RthJA - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling areal) - - 4O
Electrical Characteristics, at Ti = 25 "C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 30 - - V
VGS = 0 V, ho = 0.25 mA
Gate threshold voltage, VGs = VDS VGSM 1.2 1.6 2
ID = 80 pA
Zero gate voltage drain current IDSS pA
VDS=30V,VGS=0V,TJ-=25°C 0.1 1
bbs=30V,VGs=0V, Tj=150°C - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, VDS=0V
Drain-Source on-state resistance RDS(on) Q
VGS = 4.5 V, b = 44 A - 0.014 0.018
VGS = 10 V, ID = 44 A - 0.008 0.012
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2 05.99
