IC Phoenix
 
Home ›  SS88 > SPB30N03L-SPP30N03L,N-Channel SIPMOS Power Transistor
SPB30N03L-SPP30N03L Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
SPP30N03LSIEMENSN/a500avaiN-Channel SIPMOS Power Transistor
SPB30N03LINFINEONN/a5000avaiN-Channel SIPMOS Power Transistor
SPP30N03LINFINEONN/a10000avaiN-Channel SIPMOS Power Transistor


SPP30N03L ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage 30 - - VV(BR)DSSV = 0 V, I = 0.25 mA, T = 25 °CGS D ..
SPP30N03L ,N-Channel SIPMOS Power TransistorCharacteristicsThermal resistance, junction - case - - 2 K/WRthJC Thermal resistance, junction - am ..
SPP3413S23RG , P-Channel Enhancement Mode MOSFET
SPP3413S23RG , P-Channel Enhancement Mode MOSFET
SPP35N10 ,N-Channel SIPMOS Power TransistorFeatureV 100 VDS• N-ChannelR 45 mΩDS(on)• Enhancement modeI 35 AD•=175°C operating temperatureP-TO2 ..
SPP42N03S2L-13 ,Low Voltage MOSFETsFeatureV 30 VDS· N-ChannelR 12.9 mWDS(on)· Enhancement modeI 42 AD· Logic LevelP- TO262 -3-1 P- TO2 ..
ST16C1450CJ28 , 2.97V TO 5.5V UART
ST16C1450CJ28 , 2.97V TO 5.5V UART
ST16C1450CJ28 , 2.97V TO 5.5V UART
ST16C1450CQ48 , 2.97V TO 5.5V UART
ST16C1450IJ28 , 2.97V TO 5.5V UART
ST16C1550IJ28 , 2.97V TO 5.5V UART WITH 16-BYTE FIFO


SPB30N03L-SPP30N03L
N-Channel SIPMOS Power Transistor
SPP30N03L
SIPMOS Power Transistor
Product Summary
Features

• N channel
• Enhancement mode
• Avalanche rated
• Logic Level
• dv/dt rated
• 175°C operating temperature
Pin 1Pin 2Pin 3
DS
SPP30N03L
Thermal Characteristics
Characteristics
Static Characteristics
current limited by bond wire Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70μm thick) copper area for drain
connection. PCB is vertical without blown air.
SPP30N03L
Dynamic Characteristics
SPP30N03L
Dynamic Characteristics
Reverse Diode
SPP30N03L
Power Dissipation
tot = f (TC)
10
20
30
40
50
60
80
tot
Drain current
D = f (TC)
parameter: VGS ≥ 10 V
12
16
20
24
32
Transient thermal impedance
thJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
Safe operating area
D = f (VDS)
parameter : D = 0 , TC = 25 °C10 10 10 10
SPP30N03L
Typ. output characteristics
D = f (VDS)
parameter: tp = 80 μs
10
15
20
25
30
35
40
45
50
55
60
75
Typ. drain-source-on-resistance
DS(on) = f (ID)
parameter: VGS
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.10
DS(on)
Typ. transfer characteristics I
D= f (VGS)
parameter: tp = 80 μsDS ≥ 2 x ID x RDS(on) max
10
20
30
40
50
70
Typ. forward transconductance
fs = f(ID); Tj = 25°C
parameter: gfs
10
15
20
30
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED