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SPP20N60S5 |SPP20N60S5infineon N/a2000avaifor lowest Conduction Losses
SPP20N60S5. |SPP20N60S5INFINEONN/a33avaifor lowest Conduction Losses
SPB20N60S5N/a4400avaifor lowest Conduction Losses


SPB20N60S5 ,for lowest Conduction LossesFeatureR 0.19 ΩDS(on)• New revolutionary high voltage technologyI 20 AD• Worldwide best R in TO 220 ..
SPB21N10 ,N-Channel SIPMOS Power TransistorFeatureV 100 VDS• N-ChannelR 85 mΩDS(on)• Enhancement modeI 21 AD•=175°C operating temperatureP-TO2 ..
SPB21N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.19 ΩDS(on)• New revolutionary high voltage technologyI 21 AD• Worldwide best R in TO 220 ..
SPB30N03 ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage 30 - - VV(BR)DSSV = 0 V, I = 0.25 mAGS D2.1 3 4Gate ..
SPB30N03L ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 30 VVDS• N channelDrain-Source on-state resistance 0.018R Ω• Enhanceme ..
SPB35N10 ,Low Voltage MOSFETsFeatureV100 VDS

SPB20N60S5-SPP20N60S5 -SPP20N60S5.
for lowest Conduction Losses
SPP20N60S5
SPB20N60S5
Cool MOS™ Power Transistor
Feature

• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Maximum Ratings
SPP20N60S5
SPB20N60S5
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at Tj=25°C unless otherwise specified
SPP20N60S5
SPB20N60S5
Gate Charge Characteristics
Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP20N60S5
SPB20N60S5
Electrical Characteristics, at T
j = 25 °C, unless otherwise specified
Typical Transient Thermal Characteristics
SPP20N60S5
SPB20N60S5
1 Power dissipation
tot = f (TC)
20
40
60
80
100
120
140
160
180
200
240 SPP20N60S5
tot
2 Safe operating area
D = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10 10
3 Transient thermal impedance
thJC = f (tp)
parameter: D = tp/T
-4 10
-3 10
-2 10
-1 10 10
thJC
4 Typ. output characteristic
D = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
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SPP20N60S5
SPB20N60S5
5 Typ. output characteristic
D = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
15
20
25
35
6 Typ. drain-source on resistance
DS(on)=f(ID)
parameter: Tj=150°C, VGS
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1
1.2
1.3
DS(on)
7 Drain-source on-state resistance
DS(on) = f (Tj)
parameter : ID = 13 A, VGS = 10 V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1
SPP20N60S5
DS(on)
8 Typ. transfer characteristics
D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
15
20
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55
60
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