SPP16N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.28 ΩDS(on)• New revolutionary high voltage technologyI 16 AD• Ultra low gate chargeP-TO2 ..
SPP17N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...Characteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPP18P06P ,P-Channel SIPMOS Power TransistorCharacteristicsThermal resistance, junction - case R - - 1.85 K/WthJC Thermal resistance, junction ..
SPP18P06P ,P-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage V -60 - - V(BR)DSSV = 0 V, I = -250 μAGS DGate thres ..
SPP18P06P ,P-Channel SIPMOS Power TransistorFeaturesProduct Summary• P-Channel Drain source voltage V -60 VDS• Enhancement modeDrain-source on- ..
SPP20N60C2 ,for lowest Conduction Losses & fastest SwitchingFeatureProduct Summary• New revolutionary high voltage technologyV @ T650 VDS jmax• Worldwide best ..
ST1534A , 500mA SMART LDO
ST1534A , 500mA SMART LDO
ST1534AP2T ,500MA SMART LDOAPPLICATIONSgenerated from 5V supply. When the 5V V isAUX■ NETWORK INTERFACE CARDSavailable, theIC ..
ST16C1450CJ28 , 2.97V TO 5.5V UART
ST16C1450CJ28 , 2.97V TO 5.5V UART
ST16C1450CJ28 , 2.97V TO 5.5V UART
SPP16N50C3
for lowest Conduction Losses & fastest Switching
SPP16N50C3, SPI16N50C3
SPA16N50C3Final data
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31P-TO262-3-1P-TO220-3-1
Maximum Ratings
SPP16N50C3, SPI16N50C3
SPA16N50C3Final data
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at T=25°C unless otherwise specified
SPP16N50C3, SPI16N50C3
SPA16N50C3Final data
Electrical Characteristics
Gate Charge CharacteristicsLimited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Soldering temperature for TO-263: 220°C, reflowCo(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP16N50C3, SPI16N50C3
SPA16N50C3Final data
Electrical Characteristics
Typical Transient Thermal Characteristics
SPP16N50C3, SPI16N50C3
SPA16N50C3Final data
1 Power dissipationtot = f (TC)
20
40
60
80
100
120
140
170 SPP16N50C3
tot
2 Power dissipation FullPAKtot = f (TC)
10
15
20
25
35
tot
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10 10
4 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10 10
SPP16N50C3, SPI16N50C3
SPA16N50C3Final data
5 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
10 -1
-4 10
-3 10
-2 10
-1 10 10 10
thJ
6 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
10 1
-4 10
-3 10
-2 10
-1 10 10 10
thJ
7 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
20
30
40
60
8 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
15
20
25
35
SPP16N50C3, SPI16N50C3
SPA16N50C3Final data
9 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
0.4
0.8
1.2
(on)
10 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 10 A, VGS = 10 V
0.2
0.4
0.6
0.8
1.2
1.6 SPP16N50C3
DS(on)
11 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
15
20
25
30
35
40
45
50
12 Typ. gate chargeGS = f (QGate)
parameter: ID = 16 A pulsed
10
12
16 SPP16N50C3
