SPI12N50C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPI15N60CFD , CoolMOSTM Power Transistor Intrinsic fast-recovery body diode
SPI16N50C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPI20N60C3 ,for lowest Conduction Losses & fastest SwitchingSPP20N60C3, SPB20N60C3SPI20N60C3, SPA20N60C3Cool MOS Power TransistorV @ T 650 VDS jmax
SPI20N65C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Conditions Values Unitmin. typ. max.Transconductance g V ≥2*I *R , ..
SPI21N50C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SST89V54RD2-33-C-TQJ , FlashFlex51 MCU
SST89V54RD2-33-I-TQJE , FlashFlex51 MCU
SST89V554RC-33-C-NJ , FlashFlex51 MCU
SST89V554RC-33-I-NJ , FlashFlex51 MCU
SST89V554RC-33-I-PI , FlashFlex51 MCU
SST89V564RD-33-C-PIE , FlashFlex MCU
SPA12N50C3 -SPB12N50C3-SPI12N50C3 -SPP12N50C3
for lowest Conduction Losses & fastest Switching
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)P-TO220-3-31
Maximum Ratings
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at T=25°C unless otherwise specified
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
Characteristics
Gate Charge CharacteristicsLimited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Soldering temperature for TO-263: 220°C, reflowCo(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
Electrical Characteristics
Typical Transient Thermal Characteristics
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
1 Power dissipationtot = f (TC)
10
20
30
40
50
60
70
80
90
100
110
120
SPP12N50C3
tot
2 Power dissipation FullPAKtot = f (TC)
12
16
20
24
28
36
tot
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10 10
4 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10 10
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
5 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
10 -1
-4 10
-3 10
-2 10
-1 10 10 10
thJC
6 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
10 1
-4 10
-3 10
-2 10
-1 10 10 10
thJC
7 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
12
16
20
24
28
32
40
8 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
12
14
16
18
22
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
9 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
0.4
0.6
0.8
1.2
1.4
1.6
(on)
10 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 7 A, VGS = 10 V
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8 SPP12N50C3
DS(on)
11 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
12
16
20
24
28
32
40
12 Typ. gate chargeGS = f (QGate)
parameter: ID = 11.6 A pulsed
10
12
16 SPP12N50C3
