SPB02N60S5 ,for lowest Conduction LossesCharacteristics, at Tj=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin. t ..
SPB03N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Conditions Values Unitmin. typ. max.Transconductance g V ≥2*I *R , ..
SPB03N60S5 ,for lowest Conduction LossesCharacteristics, at Tj=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin. t ..
SPB04N50C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPB04N60C2 ,for lowest Conduction Losses & fastest SwitchingFeatureProduct Summary• New revolutionary high voltage technologyV @ T650 VDS jmax• Ultra low gate ..
SPB04N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SST39SF010A-70-4C-WHE , 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF010A-70-4I-NH , 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF020-70-4C-WH , 2 Megabit (256K x 8) Multi-Purpose Flash
SST39SF020-70-4I-WH , 2 Megabit (256K x 8) Multi-Purpose Flash
SST39SF020-90-4C-N , 2 Megabit (256K x 8) Multi-Purpose Flash
SST39SF020-90-4C-WH , 2 Megabit (256K x 8) Multi-Purpose Flash
SPB02N60S5-SPP02N60S5
for lowest Conduction Losses
SPP02N60S5
SPB02N60S5
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Maximum Ratings
SPP02N60S5
SPB02N60S5
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at Tj=25°C unless otherwise specified
SPP02N60S5
SPB02N60S5
Gate Charge CharacteristicsRepetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Soldering temperature for TO-263: 220°C, reflow
SPP02N60S5
SPB02N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Typical Transient Thermal Characteristics
SPP02N60S5
SPB02N60S5
1 Power dissipationtot = f (TC)
10
12
14
16
18
20
22
24
SPP02N60S5
tot
2 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10
3 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
4 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 1.1 A, VGS = 10 V
10
12
14
17 SPP02N60S5
DS(on)
SPP02N60S5
SPB02N60S5
5 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
6 Typ. gate chargeGS = f (QGate)
parameter: ID = 1.8 A pulsed
10
12
16 SPP02N60S5
7 Forward characteristics of body diodeF = f (VSD)
parameter: T
-2 10
-1 10 10 10
SPP02N60S5
8 Avalanche SOAAR = f (tAR)
par.: Tj ≤ 150 °C
0.2
0.4
0.6
0.8
1.2
1.4
1.6
