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SPN8822ATS8RG SPP N/a 5000 Common-Drain Dual N-Channel Enhancement Mode MOSFET
SPN8822ATS8RG SYNCP N/a 1979 Common-Drain Dual N-Channel Enhancement Mode MOSFET



SPN8822TS8RG SPP, Common-Drain Dual N-Channel Enhancement Mode MOSFET
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SPN8822ATS8RG , Common-Drain Dual N-Channel Enhancement Mode MOSFET
SPP02N60S5 ,for lowest Conduction LossesFeatureR 3 ΩDS(on)• New revolutionary high voltage technologyI 1.8 AD• Ultra low gate chargeP-TO263 ..
SPP02N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...CharacteristicsParameter Symbol Conditions Values Unitmin. typ. max.V V =0V, I =0.25mA 800 - - VDra ..
SPP02N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 2.7 ΩDS(on)• New revolutionary high voltage technologyI 2 AD• Ultra low gate chargeP-TO220 ..
SPP03N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
ST1284-01A8 ,PARALLEL PORT SINGLE TERMINATION NETWORK WITH +/-15KV ESD PROTECTIONFEATURESn One device for parallel port terminationSCHEMATIC DIAGRAMn Compliant with IEEE1284 standa ..
ST1284-01A8RL ,PARALLEL PORT SINGLE TERMINATION NETWORK WITH +/-15KV ESD PROTECTIONFEATURESn One device for parallel port terminationSCHEMATIC DIAGRAMn Compliant with IEEE1284 standa ..
ST1284-02A8 ,PARALLEL PORT SINGLE TERMINATION NETWORK WITH +/-15KV ESD PROTECTIONABSOLUTE MAXIMUM RATINGS (T 25°C)ambSymbol Parameter Value UnitV ESD discharge IEC61000-4-2, air di ..
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