SPI20N65C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Conditions Values Unitmin. typ. max.Transconductance g V ≥2*I *R , ..
SPI21N50C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPI-238-18 ,GaAs Infrared LED Ultraminiature photointerrupter (single-transistor type)Features • GaAs Infrared LED plus Single Phototransistor • Photo-Interrupter • Contact type • Compa ..
SPI-335-34 ,Ultraminiature photoreflector (single-transistor type)Features • Infrared LED plus Phototransistor (single) • DIP type • Compact type : 3.4 (L) 5 2.7 (W) ..
SPI42N03S2L-13 ,Low Voltage MOSFETsFeatureV 30 VDS• N-ChannelR 12.9 mΩDS(on)• Enhancement modeI 42 AD• Logic LevelP- TO262 -3-1 P- TO2 ..
SPI70N10L ,Low Voltage MOSFETsFeatureV100 VDS
SPA20N65C3-SPI20N65C3-SPP20N65C3
for lowest Conduction Losses & fastest Switching
SPP20N65C3, SPA20N65C3
SPI20N65C3
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
P-TO262-3-1P-TO220-3-31P-TO220-3-1
Maximum Ratings
SPP20N65C3, SPA20N65C3
SPI20N65C3
Maximum Ratings
Thermal Characteristics
SPP20N65C3, SPA20N65C3
SPI20N65C3
Electrical Characteristics
Gate Charge CharacteristicsLimited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Soldering temperature for TO-263: 220°C, reflowHTRB @ 1000h, 600V, Tjmax resp. accelerated HTRB @ 168h, 600V, Tj= 175°C
according to JEDEC A108, MIL-STD 750/1038-1040, 1042Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
SPP20N65C3, SPA20N65C3
SPI20N65C3
Electrical Characteristics
Typical Transient Thermal Characteristics
SPP20N65C3, SPA20N65C3
SPI20N65C3
1 Power dissipationtot = f (TC)
20
40
60
80
100
120
140
160
180
200
240 SPP20N65C3
tot
2 Power dissipation FullPAKtot = f (TC)
10
15
20
25
35
tot
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10 10
4 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10 10
SPP20N65C3, SPA20N65C3
SPI20N65C3
5 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
10 1
-3 10
-2 10
-1 10 10 10
thJ
6 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
20
30
40
50
60
80
7 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
15
20
25
30
35
45
8 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
0.4
0.5
0.6
0.7
0.8
0.9
1.1
1.2
1.3
(on)
SPP20N65C3, SPA20N65C3
SPI20N65C3
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 13.1 A, VGS = 10 V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1 SPP20N65C3
DS(on)
10 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
20
30
40
50
60
80
12 Forward characteristics of body diodeF = f (VSD)
parameter: T
-1 10 10 10 10
SPP20N65C3
11 Typ. gate chargeGS = f (QGate)
parameter: ID = 20.7 A pulsed
10
12
16 SPP20N65C3
