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Partno	Mfg	Dc	Qty	Available	Descript
SPD30P06P	Infineon	N/a	25200	avai	Low Voltage MOSFETs

SPD30P06P ,Low Voltage MOSFETsFeatureV -60 VDS• P-ChannelR 0.075 ΩDS(on)• Enhancement modeI -30 AD• 175°C operating temperatureP- ..
SPD31N05 ,SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance R 0.036 Ω• Enhancem ..
SPD35N10 ,Low Voltage MOSFETsCharacteristicsV 100 - - VDrain-source breakdown voltage(BR)DSSV =0V, I =1mAGS DGate threshold volt ..
SPD35N10 ,Low Voltage MOSFETsFeatureV100 VDS

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SPD30P06P
Low Voltage MOSFETs
SPD30P06P
SPU30P06PFinal data
SIPMOS Power-TransistorProduct Summary
Feature
• P-Channel
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
SPD30P06P
SPU30P06PFinal data
Thermal Characteristics
Characteristics
Static Characteristics
SPD30P06P
SPU30P06PFinal data
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
SPD30P06P
SPU30P06PFinal data
1 Power dissipationtot = f (TC)
10
20
30
40
50
60
70
80
90
100
110
120
SPD30P06P
tot
2 Drain currentD = f (TC)
parameter: |VGS |≥ 10 V
-4
-8
-12
-16
-20
-24
-32 SPD30P06P
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C-10 -10 -10 -10
SPD30P06P
4 Max. transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-5 10
-4 10
-3 10
-2 10
-1 10 10
SPD30P06P
thJC
SPD30P06P
SPU30P06PFinal data
5 Typ. output characteristicD = f (VDS)
parameter: Tj =25°C
10
20
30
40
50
60
70
90
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS; Tj = 25 °C
0.1
0.2
0.3
0.4
0.5
0.7
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: T = 25 °C
10
20
30
40
50
60
70
90
8 Typ. forward transconductancefs = f(ID)
parameter: T = 25 °C
10
12
14
18
SPD30P06P
SPU30P06PFinal data
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = -21.5 A, VGS = -10 V
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2 SPD30P06P
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
3.5
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz; T10 10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T-10 -10 -10 -10
SPD30P06P

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