IC Phoenix
 
Home ›  SS87 > SPD30N03,N-Channel SIPMOS Power Transistor
SPD30N03 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
SPD30N03INFINEONN/a30avaiN-Channel SIPMOS Power Transistor


SPD30N03 ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 30 VVDS• N channelDrain-Source on-state resistance 0.015R Ω• Enhanceme ..
SPD30N03L ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 30 VVDS• N channelDrain-Source on-state resistance 0.012R Ω• Enhanceme ..
SPD30N03S2L-07 ,Low Voltage MOSFETsFeatureV 30 VDS· N-ChannelR 6.7 mWDS(on)· Enhancement modeI 30 AD· Logic LevelP- TO252 -3-11· Excel ..
SPD30N03S2L-10 ,Low Voltage MOSFETsFeatureV30 VDS· N-ChannelR 10 mWDS(on)· Enhancement modeI 30 AD· Logic LevelP- TO252 -3-11· Low On- ..
SPD30N06S2-23 ,Low Voltage MOSFETsFeatureV55 VDS· N-ChannelR 23 mWDS(on)· Enhancement modeI 30 AD· 175°C operating temperatureP- TO2 ..
SPD30N08S2-22 ,Low Voltage MOSFETsFeatureV75 VDS· N-ChannelR 21.5 mWDS(on)· Enhancement modeI 30 AD· 175°C operating temperatureP- TO ..
SST39WF1601-70-4C-B3KE , 16 Mbit (x16) Multi-Purpose Flash Plus
SST39WF1601-70-4C-MBQE , 16 Mbit (x16) Multi-Purpose Flash Plus
SST39WF1601-70-4I-B3KE , 16 Mbit (x16) Multi-Purpose Flash Plus
SST39WF1601-70-4I-MBQE , 16 Mbit (x16) Multi-Purpose Flash Plus
SST39WF1601-90-4C-B3KE , 16 Mbit (x16) Multi-Purpose Flash Plus
SST39WF1601-90-4C-B3KE , 16 Mbit (x16) Multi-Purpose Flash Plus


SPD30N03
N-Channel SIPMOS Power Transistor
( Infineon
technologies
SIPMOS® Power Transistor SPD 30N03
Features Product Summary
. N channel Drain source voltage Vros 30 v
. Enhancement mode Drain-Source on-state resistance RDS(on) 0.015 n
. Avalanche rated Continuous drain current ID 30 A
o d v/dt rated
. 175°C operating temperature
VPTO9051
Type Package Ordering Code Packaging Pin 1 Pin 2 Pin 3
SPD30N03 P-T0252 Q67040-S4144-A2 Tape and Reel G D S
SPU30N03 P-T0251-3-1 Q67040-S4146-A2 Tube
Maximum Ratings, at Ti = 25 "C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 "C, 1) 30
To = 100 ( 30
Pulsed drain current IDpuIse 120
Tc = 25 "C
Avalanche energy, single pulse EAS 250 mJ
ID = 30A, VDD=25V, RGS=259
Avalanche energy, periodic limited by Timex EAR 12
Reverse diode dv/dt dv/dt 6 kV/ps
IS = 30 A, bbs = 24 V, di/dt= 200 Alps,
ijax = 175 (
Gate source voltage VGS E0 V
Power dissipation Ptot 120 W
TC = 25 ''C
Operating and storage temperature Ti, Tsta -55... +175 (
IEC climatic category; DIN IEC 68-1 55/175/56
Data Sheet
Infineon SPD 30N03
technologies/
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - 1.25 KNV
Thermal resistance, junction - ambient, leded RthJA - - 100
SMD version, device on PCB: RthJA
@ min. footprint - - 75
@ 6 cm2 cooling area2) - - 5O
Electrical Characteristics, at Ti = 25 ''C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 30 - - V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS Vegan) 2.1 3 4
ID = 80 pA
Zero gate voltage drain current IDSS pA
VDS=30V,VGS=0V,Tj=25°C 0.1 1
1/bs=301/,VGs=0V,Tj=150oC - - 100
Gate-source leakage current less - 10 100 nA
VGS=20V, VDS=0V
Drain-Source on-state resistance RDS(on) n
VGS = 10 V, ID = 30 A - 0.0085 0.015
1current limited by bond wire
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2 05.99
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED