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SPD28N05LINFINEONN/a32500avaiSIPMOS Power Transistor


SPD28N05L ,SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.026R Ω• Enhanceme ..
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SPD30N03L ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 30 VVDS• N channelDrain-Source on-state resistance 0.012R Ω• Enhanceme ..
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SPD28N05L
SIPMOS Power Transistor
( Infineon wed Ramon)" SPD 28N05L
technologies trnpro
SIPMOS(g) PowerTransistor
Features Product Summary
. N channel Drain source voltage VDS 55 V
. Enhancement mode Drain-Source on-state resistance RDSM 0.026 n
. Avalanche rated Continuous drain current ho 28 A
q Logic Level
. d v/dt rated
q 175°C operating temperature
VPTOSOSW
Type Package Ordering Code Packaging Pin1 Pin 2 Pin 3
SPD28N05L P-TO252 Q67040-S4122 Tape and Reel G D S
SPU28N05L P-T0251 Q67040-S4114-A2 Tube
Maximum Ratings, at Ti = 25 ''C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 "C 28
To = 100 ''C 20
Pulsed drain current leuIse 112
To = 25 °C
Avalanche energy, single pulse EAS 140 m1
ID = 28A, VDD = 25 V, Rss = 25 n
Avalanche energy, periodic limited by Timax EAR 7.5
Reverse diode dv/dt dv/dt 6 kV/ps
ls = 28 A, bbs = 40 V, di/dt= 200 Alps,
Timax = 175 (
Gate source voltage VGS -20 V
Power dissipation Ptot 75 W
To = 25 °C
Operating and storage temperature Ti, Tstq -55... +175 (
IEC climatic category; DIN IEC 68-1 55/175/56
Data Sheet
Infineon SPD 28N05L
technologies
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 2 KNV
Thermal resistance, junction - ambient, leded RthJA - - 100
SMD version, device on PCB: RthJA
© min. footprint - - 75
@ 6 cm2 cooling areal) - - 50
Electrical Characteristics, at Ti = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 55 - - V
VGS = O V, ho = 0.25 mA
Gate threshold voltage, VGS = VDS VGSM 1.2 1.6 2
ID = 50 pA
Zero gate voltage drain current IDSS pA
VDS=50V,VGS=0V,7'j=25°C - 0.1 1
VDs=50V,VGs=0V,Tj=150°C - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, VDS= 0V
Drain-Source on-state resistance RDS(0n) Q
VGS = 4.5 V, b = 20 A - 0.04 0.044
VGS = 10 V, ID = 20 A - 0.0235 0.026
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2 06.99
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