SPD28N03L ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage 30 - - VV(BR)DSSV = 0 V, I = 0.25 mAGS DGate thresho ..
SPD28N03L ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 30 VVDS• N channelDrain-Source on-state resistance 0.018R Ω• Enhanceme ..
SPD28N05L ,SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.026R Ω• Enhanceme ..
SPD30N03 ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 30 VVDS• N channelDrain-Source on-state resistance 0.015R Ω• Enhanceme ..
SPD30N03L ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 30 VVDS• N channelDrain-Source on-state resistance 0.012R Ω• Enhanceme ..
SPD30N03S2L-07 ,Low Voltage MOSFETsFeatureV 30 VDS· N-ChannelR 6.7 mWDS(on)· Enhancement modeI 30 AD· Logic LevelP- TO252 -3-11· Excel ..
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SPD28N03L
N-Channel SIPMOS Power Transistor
SPD28N03L
SIPMOS Power Transistor
Product Summary
Features• N channel
• Enhancement mode
• Avalanche rated
• Logic Level
• dv/dt rated
• 175°C operating temperature
Pin 1Pin 2Pin 3DS
SPD28N03L
Thermal Characteristics
Characteristics
Static Characteristicscurrent limited by bond wire Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70μm thick) copper area for drain
connection. PCB is vertical without blown air.
SPD28N03L
Dynamic Characteristics
SPD28N03L
Dynamic Characteristics
Reverse Diode
SPD28N03L
Power Dissipationtot = f (TC)
10
20
30
40
50
60
80
tot
Drain currentD = f (TC)
parameter: VGS ≥ 10 V
12
16
20
24
32
Transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
Safe operating areaD = f (VDS)
parameter : D = 0 , TC = 25 °C10 10 10 10
SPD28N03L
Typ. output characteristicsD = f (VDS)
parameter: tp = 80 μs
10
15
20
25
30
35
40
45
50
55
60
75
Typ. drain-source-on-resistanceDS(on) = f (ID)
parameter: VGS
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.10
DS(on)
Typ. transfer characteristics ID= f (VGS)
parameter: tp = 80 μsDS ≥ 2 x ID x RDS(on)max
10
20
30
40
50
70
Typ. forward transconductancefs = f(ID); Tj = 25°C
parameter: gfs
10
15
20
30
