SPD28N03 ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage 30 - - VV(BR)DSSV = 0 V, I = 0.25 mAGS D2.1 3 4Gate ..
SPD28N03L ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage 30 - - VV(BR)DSSV = 0 V, I = 0.25 mAGS DGate thresho ..
SPD28N03L ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 30 VVDS• N channelDrain-Source on-state resistance 0.018R Ω• Enhanceme ..
SPD28N05L ,SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.026R Ω• Enhanceme ..
SPD30N03 ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 30 VVDS• N channelDrain-Source on-state resistance 0.015R Ω• Enhanceme ..
SPD30N03L ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 30 VVDS• N channelDrain-Source on-state resistance 0.012R Ω• Enhanceme ..
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SPD28N03-SPU28N03
N-Channel SIPMOS Power Transistor
(Cl,":,!,:,:!,]:!.,,!,,,,,,,,,-,, SPD 28N03
technologies
SIPMOS® Power Transistor
Features Product Summary
. N channel Drain source voltage Vros 30 v
. Enhancement mode Drain-Source on-state resistance RDSM) 0.023 f2
. Avalanche rated Continuous drain current ID 28 A
o d v/dt rated
q 175°C operating temperature
VPT09051
Type Package Ordering Code Packaging Pin 1 Pin 2 Pin 3
SPD28NO3 P-T0252 Q67040-S4138 Tape and Reel G D S
SPU28N03 P-TO251-3-1 Q67040-S4140-A2 Tube
Maximum Ratings, at Ti = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current ID A
To = 25 °C, 1) 28
TC = 100 ( 28
Pulsed drain current leulse 112
TC = 25 (
Avalanche energy, single pulse EAS 145 mJ
ID=28A, VDD=25V, RGS=25§2
Avalanche energy, periodic limited by Timex EAR 7.5
Reverse diode d v/dt dv/dt 6 kV/ps
IS = 28 A, VDs = 24 V, dildt= 200 Alps,
ijax = 175 (
Gate source voltage VGS i20 V
Power dissipation Ptot 75 W
To = 25 (
Operating and storage temperature Ti, Tsta -55... +175 (
IEC climatic category; DIN IEC 68-1 55/175/56
Data Sheet
Infineon SPD 28N03
technologies
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - 2 KNV
Thermal resistance, junction - ambient, leded RthJA - - 100
SMD version, device on PCB: RthJA
@ min. footprint - - 75
© 6 cm2 cooling area) - - 50
Electrical Characteristics, at Ti = 25 ''C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 30 - - V
VGs = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS VGS(th) 2.1 3 4
ID = 50 pA
Zero gate voltage drain current /DSS pA
VDS=30V,VGS=0V,TJ-=25°C 0.1 1
Vros=30v,ves=01/,Tj=150oC - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, bbs-- 0V
Drain-Source on-state resistance RDSM) (2
W38 = 10 V, ID = 28 A - 0.014 0.023
1current limited by bond wire
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2 06.99
