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SPD22N08S2L-50 |SPD22N08S2L50INFINEONN/a100avaiLow Voltage MOSFETs


SPD22N08S2L-50 ,Low Voltage MOSFETsFeatureV 75 VDS· N-ChannelR 50 mWDS(on)· Enhancement modeI 25 AD· Logic LevelP- TO252 -3-11· 175°C ..
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SPD22N08S2L-50
Low Voltage MOSFETs
OptiMOSâ Power-Transistor
Product Summary
Feature

· N-Channel
· Enhancement mode
· Logic Level
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
P- TO252 -3-11
Thermal Characteristics
Characteristics
Electrical Characteristics, at T
j = 25 °C, unless otherwise specified
Static Characteristics

1Defined by design. Not subject to production test.
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
1 Power dissipation
Ptot = f (TC)
parameter: VGS³ 4 V
10
20
30
40
50
60
80 SPD22N08S2L-50
tot
2 Drain current

ID = f (TC)
parameter: VGS³ 10 V
10
12
14
16
18
20
22
24
SPD22N08S2L-50
4 Max. transient thermal impedance

ZthJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
3 Safe operating area

ID = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
SPD22N08S2L-50
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
15
20
25
30
35
40
45
50
60 SPD22N08S2L-50
6 Typ. drain-source on resistance

RDS(on) = f (ID)
parameter: VGS
20
40
60
80
100
120
160 SPD22N08S2L-50
DS(on)
7 Typ. transfer characteristics

ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
10
20
30
50
8 Typ. forward transconductance
fs = f(ID); Tj=25°C
parameter: gfs
10
15
20
25
30
40
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 11 A, VGS = 10 V
20
40
60
80
100
120
140
160 SPD22N08S2L-50
DS(on)
10 Typ. gate threshold voltage

VGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
GS(th)
11 Typ. capacitances

C = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10 10
12 Forward character. of reverse diode

IF = f (VSD)
parameter: Tj , tp = 80 µs
-1 10 10 10 10
SPD22N08S2L-50
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