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SPD14N05InfineonN/a25200avaiSIPMOS Power Transistor


SPD14N05 ,SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.08R Ω• Enhancemen ..
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SPD14N05
SIPMOS Power Transistor
technologies trnpro
SIPMOS© PowerTransistor
Features Product Summary
. N channel Drain source voltage VDS 55 V
. Enhancement mode Drain-Source on-state resistance RDS(on) 0.08 f2
. Avalanche rated Continuous drain current ho 13.5 A
o d v/dt rated
. 175°C operating temperature
VPTG905O
VPT09051
Type Package Ordering Code Packaging Pin1 Pin 2 Pin 3
SPD14NO5 P-T0252 Q67040-S4123 Tape and Reel G D S
SPU14N05 P-T0251 Q67040-S4115-A2 Tube
MaximumRatings , at Ti = 25 °C, unless otherwise specified
Parameter 1 Symbol Value Unit
Continuous drain current /D A
To = 25 "C 13.5
To = 100 ( 9.6
Pulsed drain current IDpuIse 54
TC = 25 T)
Avalanche energy, single pulse EAS 52 mJ
ho =13.5A, VDD = 25 V, Rss = 25 Q
Avalanche energy, periodic limited by Timex EAR 3.5
Reverse diode dv/dt dv/dt 6 kV/ps
ls = 13.5A, VDS = 40 V, di/dt= 200 Alps,
ijax = 175 "C
Gate source voltage VGS i20 V
Power dissipation Ptot 35 W
TC = 25 "C
Operating and storage temperature Ti, Tsta -55... +175 (
IEC climatic category; DIN IEC 68-1 55/175/56
Data Sheet
(Cl,":,!,:,:!,]:!.,,!,,,,,,,,,-,, SPD 14N05
technologies
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 4 3 KNV
Thermal resistance, junction - ambient, leded RthJA - - 100
SMD version, device on PCB: RthJA
© min. footprint - - 75
@ 6 cm2 cooling areal) - - 50
Electrical Characteristics, at Ti = 25 ''C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 55 - - V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS VGS(th) 2.1 3 4
ID = 20 pA
Zero gate voltage drain current /DSS pA
VDS=5OV,VGS=0V,TJ-=25°C - 0.1 1
Vros=50v,ves=01/,Tj=150oC - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, bbs-- 0V
Drain-Source on-state resistance RDSM) £2
VGS=1OV, ID=9.6A
- 0.074 0.08
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet
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