SPD10N10 ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 100 VV• N channel DSDrain-Source on-state resistance 0.2R Ω• Enhanceme ..
SPD13N05L ,SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.064R Ω• Enhanceme ..
SPD14N05 ,SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.08R Ω• Enhancemen ..
SPD14N06S2-80 ,Low Voltage MOSFETsFeatureV55 VDS· N-ChannelR 80 mWDS(on)· Enhancement modeI 17 AD· 175°C operating temperatureP- TO25 ..
SPD15N06S2L-64 ,Low Voltage MOSFETsFeatureV55 VDS· N-ChannelR 64 mWDS(on)· Enhancement modeI 19 AD· Logic LevelP- TO252 -3-11· 175°C o ..
SPD15N06S2L-64 ,Low Voltage MOSFETsCharacteristicsDrain-source breakdown voltage V 55 - - V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thres ..
SST39VF800A-70-4I-B3K , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4I-B3KE-T , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4I-M1QE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-90-4C-B3K , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-90-4I-B3K , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-90-4I-EK , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SPD10N10
N-Channel SIPMOS Power Transistor
(Cl,":,!,:,:!,]:!.,,!,,,,,,,,,-,, SPD 10N10
technologies
Preliminary Data
SIPMOS® Power Transistor
Features Product Summary
. N channel Drain source voltage VDS 100 V
. Enhancement mode Drain-Source on-state resistance Rrosion) 0.2 Q
. Avalanche rated Continuous drain current ID 10 A
o d v/dt rated
VPT09051
Type Package Ordering Code Packaging Pin 1 Pin 2 Pin 3
SPD10N10 P-T0252 Q67040-S4119 Tape and Reel G D s
SPU10N10 P-T0251 Q67040-S4111-A2 Tube
Maximum Ratings, at Ti = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 ( 10
TC = 100 ( 6.3
Pulsed drain current leulse 40
TC = 25 (
Avalanche energy, single pulse EAS 59 mJ
ID: 10A, VDD=25V, RGS=25§2
Avalanche energy, periodic limited by Timex EAR 4
Reverse diode d v/dt dv/dt 6 kV/ps
IS = 10 A, VDS = 0 V, di/dt= 200 Alps
Gate source voltage VGS izo V
Power dissipation Ptot 40 W
To = 25 (
Operating and storage temperature Ti, Tsta -55... +175 (
IEC climatic category; DIN IEC 68-1 55/150/56
Data Sheet
(Cl,":,!,:,:!,]:!.,,!,,,,,,,,,-,, SPD 10N10
technologies
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - 3.1 KNV
Thermal resistance, junction - ambient, leded RthJA - - 100
SMD version, device on PCB: RthJA
@ min. footprint - - 75
@ 6 cm2 cooling areal) - - 50
Electrical Characteristics, at Ti = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 100 - - V
VGS = 0 V, ho = 0.25 mA
Gate threshold voltage, VGs = VDS VGSM 2.1 3 4
ho = 1 mA
Zero gate voltage drain current IDSS pA
VDS=100V, VGS=0V, T=25''C - 0.1 1
VDS=100V, VGS=OV, 7j=125°C - - 100
Gate-source leakage current less - 10 100 nA
VGS=20V, VDS= 0V
Drain-Source on-state resistance RDS(0n) n
VGS=10V,ID=6A - 0.15 0.2
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2
