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Partno	Mfg	Dc	Qty	Available	Descript
SPD100N03S2L-04 \|SPD100N03S2L04	Infineon	N/a	25200	avai	Low Voltage MOSFETs

SPD100N03S2L-04 ,Low Voltage MOSFETsFeatureV 30 VDS· N-ChannelR 4.2 mWDS(on)· Enhancement modeI 100 AD· Logic LevelP-TO252-5-1· Excelle ..
SPD10N10 ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 100 VV• N channel DSDrain-Source on-state resistance 0.2R Ω• Enhanceme ..
SPD13N05L ,SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.064R Ω• Enhanceme ..
SPD14N05 ,SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.08R Ω• Enhancemen ..
SPD14N06S2-80 ,Low Voltage MOSFETsFeatureV55 VDS· N-ChannelR 80 mWDS(on)· Enhancement modeI 17 AD· 175°C operating temperatureP- TO25 ..
SPD15N06S2L-64 ,Low Voltage MOSFETsFeatureV55 VDS· N-ChannelR 64 mWDS(on)· Enhancement modeI 19 AD· Logic LevelP- TO252 -3-11· 175°C o ..
SST39VF800A-70-4C-M1QE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-M1QE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4I-B3K , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4I-B3KE-T , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4I-M1QE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-90-4C-B3K , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash

SPD100N03S2L-04
Low Voltage MOSFETs
OptiMOSâ Power-Transistor
Product Summary
Feature
· N-Channel
· Enhancement mode
· Logic Level
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
P-TO252-5-1
Gate
pin 1
Drain
pin 3,6
Source
pin 4,5n.c.: pin 2
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
1pin 1 and 2 have to be connected together on the PCB as well as pin 4 and 5.
2Current limited by bondwire ; with an RthJC = 1K/W the chip is able to carry ID= 307A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
3Defined by design. Not subject to production test.
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
1 Power dissipation
Ptot = f (TC)
parameter: VGS³ 4 V
20
40
60
80
100
120
160
SPD100N03S2L-04
tot
2 Drain current
ID = f (TC)
parameter: VGS³ 10 V
10
20
30
40
50
60
70
80
90
110
SPD100N03S2L-04
4 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
SPD100N03S2L-04
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
20
40
60
80
100
120
140
160
180
200
240
SPD100N03S2L-04
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
10
11
12
14
SPD100N03S2L-04
DS(on)
7 Typ. transfer characteristics
ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 20 µs
20
40
60
80
100
120
140
180
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
20
30
40
50
60
70
80
90
100
110
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 50 A, VGS = 10 V
11
SPD100N03S2L-04
DS(on)
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
0.35
0.55
0.75
0.95
1.15
1.35
1.55
1.75
1.95
2.35
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs10 10 10 10
SPD100N03S2L-04

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