SPD09P06PL ,Low Voltage MOSFETsFeatureV-60 VDS
SPD09P06PL
Low Voltage MOSFETs
SPD09P06PL
SPU09P06PLFinal data
SIPMOS
=Power-Transistor
Product Summary
Feature P-Channel Enhancement mode Logic Level175°C operating temperature Avalanche rated dv/dt rated
SPD09P06PL
SPU09P06PLFinal data
Thermal Characteristics
Characteristics
Static Characteristics
SPD09P06PL
SPU09P06PLFinal data
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
SPD09P06PL
SPU09P06PLFinal data
1 Power dissipationtot = f (TC)
10
15
20
25
30
35
40
50 SPD09P06PL
tot
2 Drain currentD = f (TC)
parameter: VGS 10 V
-1
-2
-3
-4
-5
-6
-7
-8
-9
-11
SPD09P06PL
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C
-1 -10 -10 -10 -10
SPD09P06PL
4 Transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
SPD09P06PL
SPU09P06PLFinal data
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs-2-4-6-8
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-24 SPD09P06PL
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
0.1
0.2
0.3
0.4
0.5
0.6
0.8 SPD09P06PL
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS- 2 x ID x RDS(on)max
parameter: tp = 80 µs
10
15
25
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
0.5
1.5
2.5
SPD09P06PL
SPU09P06PLFinal data
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = -6.8 A, VGS = -10 V
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
SPD09P06PL
DS(on)
10 Gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS, ID = -250 µA
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-1 -10 -10 -10 -10
SPD09P06PL
