SPD08N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.6 ΩDS(on)• New revolutionary high voltage technologyI 7.6 AD• Worldwide best R in TO-252 ..
SPD08P06P ,P-Channel SIPMOS Power TransistorFeaturesProduct Summary• P-Channel Drain source voltage V -60 VDS• Enhancement modeDrain-source on- ..
SPD09N05 ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.1R Ω• Enhancement ..
SPD09P06PL ,Low Voltage MOSFETsFeatureV-60 VDS
SPD08N50C3
for lowest Conduction Losses & fastest Switching
SPD08N50C3Final data
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO-252
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Maximum Ratings, at TC
= 25°C, unless otherwise specified
SPD08N50C3Final data
Maximum Ratings
Thermal Characteristics
Electrical Characteristics
SPD08N50C3Final data
Gate Charge CharacteristicsRepetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Soldering temperature for TO-263: 220°C, reflowCo(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPD08N50C3Final data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Typical Transient Thermal Characteristics
SPD08N50C3Final data
1 Power dissipationtot = f (TC)
10
20
30
40
50
60
70
80
100 SPD08N50C3
tot
2 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10 10
3 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
-3 10
-2 10
-1 10 10 10
thJ
4 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
12
16
24
SPD08N50C3Final data
5 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
11
6 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
10
(on)
7 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 4.6 A, VGS = 10 V
0.4
0.8
1.2
1.6
2.4
2.8
3.4 SPD08N50C3
DS(on)
8 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
12
14
16
18
20
