SPD08N05L ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.1R Ω• Enhancement ..
SPD08N10 ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 100 VV• N channel DSDrain-Source on-state resistance 0.3R Ω• Enhanceme ..
SPD08N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.6 ΩDS(on)• New revolutionary high voltage technologyI 7.6 AD• Worldwide best R in TO-252 ..
SPD08P06P ,P-Channel SIPMOS Power TransistorFeaturesProduct Summary• P-Channel Drain source voltage V -60 VDS• Enhancement modeDrain-source on- ..
SPD09N05 ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.1R Ω• Enhancement ..
SPD09P06PL ,Low Voltage MOSFETsFeatureV-60 VDS
SPD08N05L
N-Channel SIPMOS Power Transistor
. . SPD 08N05L
Lnfmg roued Raw)
SIPMOS(E) PowerTransistor
Features Product Summary
. N channel Drain source voltage VDS 55 v
. Enhancement mode Drain-Source on-state resistance RDS(on) 0.1 f2
. Avalanche rated Continuous drain current ho 8.4 A
. Logic Level
. d v/dt rated
. 175°C operating temperature
VPT09051
Type Package Ordering Code Packaging Pin1 Pin 2 Pin 3
SPD08N05L P-T0252 Q67040-S4134 Tape and Reel G D S
SPU08N05L P-T0251 Q67040-S4182-A2 Tube
MaximumRatings , at Ti = 25 ''C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current ID A
To = 25 ”C 8.4
To = 100 ( 5.9
Pulsed drain current leuIse 34
TC = 25 ''C
Avalanche energy, single pulse EAS 35 mJ
ID = 8.4 A, VDD = 25 V, Rss = 25 Q
Avalanche energy, periodic limited by ijax EAR 2.4
Reverse diode dv/dt dv/dt 6 kV/ps
ls = 8.4 A, bbs = 40 V, di/dt= 200 Alps,
ijax = 175 "C
Gate source voltage VGS i20 V
Power dissipation Ptot 24 W
TC = 25 ''C
Operating and storage temperature Ti , Tstg -55... +175 "C
IEC climatic category; DIN IEC 68-1 55/175/56
Data Sheet
Infineon SPD 08N05L
technologies
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - 6.25 KNV
Thermal resistance, junction - ambient, leded RthJA - - 100
SMD version, device on PCB: RthJA
© min. footprint - - 75
@ 6 cm2 cooling areal) - - 50
Electrical Characteristics, at Ti = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 55 - - V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS VGS(th) 1.2 1.6 2
ID = 10 pA
Zero gate voltage drain current loss pA
VDS=50V,VGS=0V,TJ-=25°C - 0.1 1
1/bs=50v',v'Gs=01/,ri=150''c - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, bbs-- 0V
Drain-Source on-state resistance RDS(On) Q
VGS = 4.5 V, ID = 5.9 A - 0.125 0.15
VGS = 10 V, ID = 5.9 A - 0.08 0.1
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2 06.99
