SPD07N60C2 ,for lowest Conduction Losses & fastest SwitchingFeatureProduct Summary• New revolutionary high voltage technologyVV 600DS• Worldwide best R in TO-2 ..
SPD07N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.6 ΩDS(on)• New revolutionary high voltage technologyI 7.3 AD• Worldwide best R in TO-251 ..
SPD07N60S5 ,for lowest Conduction LossesFeatureR 0.6 ΩDS(on)• New revolutionary high voltage technologyI 7.3 AD• Worldwide best R in TO-251 ..
SPD08N05L ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.1R Ω• Enhancement ..
SPD08N10 ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 100 VV• N channel DSDrain-Source on-state resistance 0.3R Ω• Enhanceme ..
SPD08N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.6 ΩDS(on)• New revolutionary high voltage technologyI 7.6 AD• Worldwide best R in TO-252 ..
SST39VF800A-70-4C-M1Q , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-M1QE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-M1QE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4I-B3K , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4I-B3KE-T , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4I-M1QE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SPD07N60C2
for lowest Conduction Losses & fastest Switching
SPD07N60C2
SPU07N60C2Final data
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Worldwide best R
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved noise immunity
Product Summary
Maximum Ratings, at TC
= 25°C, unless otherwise specified
SPD07N60C2
SPU07N60C2Final data
Thermal Characteristics
Characteristics
Static CharacteristicsRepetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
SPD07N60C2
SPU07N60C2Final data
Characteristics
Gate Charge CharacteristicsCo(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
SPD07N60C2
SPU07N60C2Final data
Characteristics
Typical Transient Thermal Characteristics
SPD07N60C2
SPU07N60C2Final data
1 Power dissipationtot = f (TC)
10
20
30
40
50
60
70
80
100 SPD07N60C2
tot
2 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10 10
3 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
-3 10
-2 10
-1 10 10 10
thJC
4 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
15
25
SPD07N60C2
SPU07N60C2Final data
5 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
12
6 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
1.5
DS(on)
7 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 4.6 A, VGS = 10 V
0.4
0.8
1.2
1.6
2.4
2.8
3.4 SPD07N60C2
DS(on)
8 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
12
14
16
18
20
