| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| SPD04P10PL G |
INFINEON|Infineon |
N/a |
20000 |
 |
SIPMOS® Power-Transistor Features P-Channel Enhancement mode |
SPD04P10PL G , SIPMOS® Power-Transistor Features P-Channel Enhancement mode
SPD04P10PLG , SIPMOS® Power-Transistor Features P-Channel Enhancement mode
SPD06N60C3 ,for lowest Conduction Losses & fastest SwitchingFeaturesV @ T 650 VDS j,max• New revolutionary high voltage technologyR 0.75ΩDS(on),max• Ultra low ..
SPD06N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 0.9 ΩDS(on)• New revolutionary high voltage technologyI 6 AD• Worldwide best R in TO252DS ..
SPD07N20 ,Low Voltage MOSFETsFeaturesDrain source voltage 200 VVDS• N channelDrain-Source on-state resistance 0.4R Ω• Enhancemen ..
SST39VF800A-70-4C-EK , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-EK , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-M1Q , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
