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SPD03N60S5-SPU03N60S5 Fast Delivery,Good Price
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SPU03N60S5INFINEONN/a40avaifor lowest Conduction Losses
SPD03N60S5INFINEONN/a2402avaifor lowest Conduction Losses


SPD03N60S5 ,for lowest Conduction LossesFeatureR 1.4 ΩDS(on)• New revolutionary high voltage technologyI 3.2 AD• Ultra low gate chargeP-TO2 ..
SPD04N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.95 ΩDS(on)• New revolutionary high voltage technologyI 4.5 AD• Ultra low gate chargeP-TO ..
SPD04N60S5 ,for lowest Conduction LossesFeatureR 0.95 ΩDS(on)• New revolutionary high voltage technologyI 4.5 AD• Ultra low gate chargeP-TO ..
SPD04N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 1.3 ΩDS(on)• New revolutionary high voltage technologyI 4 AD• Ultra low gate chargeP-TO252 ..
SPD04P10P G , SIPMOS® Power-Transistor Features P-Channel Enhancement mode
SPD04P10PG , SIPMOS® Power-Transistor Features P-Channel Enhancement mode
SST39VF800A-70-4C-B3K , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-B3KE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-EK , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-EK , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-M1Q , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-M1QE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash


SPD03N60S5-SPU03N60S5
for lowest Conduction Losses
SPU03N60S5
SPD03N60S5
Cool MOS™ Power Transistor
Feature

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
P-TO251.P-TO252.
Maximum Ratings
SPU03N60S5
SPD03N60S5
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at Tj=25°C unless otherwise specified
SPU03N60S5
SPD03N60S5
Gate Charge Characteristics
Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
SPU03N60S5
SPD03N60S5
Electrical Characteristics, at T
j = 25 °C, unless otherwise specified
Typical Transient Thermal Characteristics
SPU03N60S5
SPD03N60S5
1 Power dissipation
tot = f (TC)
12
16
20
24
28
32
40 SPU03N60S5
tot
2 Safe operating area
D = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10
3 Transient thermal impedance
thJC = f (tp)
parameter: D = tp/T
-2 10
-1 10 10 10
thJC
4 Typ. output characteristic
D = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
SPU03N60S5
SPD03N60S5
5 Drain-source on-state resistance
DS(on) = f (Tj)
parameter : ID = 2 A, VGS = 10 V
-60SPU03N60S5
DS(on)
6 Typ. transfer characteristics
D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
7 Typ. gate charge
GS = f (QGate)
parameter: ID = 3.2 A pulsed
10
12
16 SPU03N60S5
8 Forward characteristics of body diode
F = f (VSD)
parameter: T
-2 10
-1 10 10 10
SPU03N60S5
ic,good price


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