SPD02N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 3 ΩDS(on)• New revolutionary high voltage technologyI 1.8 AD• Ultra low gate chargeP-TO252 ..
SPD02N60 ,SIPMO Power TransistorSPD02N60SPU02N60Preliminary data®SIPMOS Power Transistor• N-Channel• Enhancement mode• Avalanche ra ..
SPD02N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 3 ΩDS(on)• New revolutionary high voltage technologyI 1.8 AD• Ultra low gate chargeP-TO251 ..
SPD02N60S5 ,for lowest Conduction LossesFeatureR 3 ΩDS(on)• New revolutionary high voltage technologyI 1.8 AD• Ultra low gate chargeP-TO252 ..
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SPD02N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 2.7 ΩDS(on)• New revolutionary high voltage technologyI 2 AD• Ultra low gate chargeP-TO252 ..
SST39VF800-70-4C-BK , 8 Megabit (512K x 16-Bit) Multi-Purpose Flash
SST39VF800-70-4C-EK , 8 Megabit (512K x 16-Bit) Multi-Purpose Flash
SST39VF800-70-4C-EK , 8 Megabit (512K x 16-Bit) Multi-Purpose Flash
SST39VF800-90-4C-EK , 8 Megabit (512K x 16-Bit) Multi-Purpose Flash
SST39VF800A-70-4C-B3K , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-B3KE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SPD02N50C3
for lowest Conduction Losses & fastest Switching
SPD02N50C3Final data
Cool MOS Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Maximum Ratings
SPD02N50C3Final data
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at Tj=25°C unless otherwise specified
SPD02N50C3Final data
Gate Charge CharacteristicsRepetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPD02N50C3Final data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Typical Transient Thermal Characteristics
SPD02N50C3Final data
1 Power dissipationtot = f (TC)
10
12
14
16
18
20
22
24
SPD02N50C3
tot
2 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10
3 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
-3 10
-2 10
-1 10 10 10
thJC
4 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
0.5
1.5
2.5
3.5
4.5
5.5
SPD02N50C3Final data
5 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
6 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
10
12
14
16
20
(on)
7 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 1.1 A, VGS = 10 V
10
12
14
17 SPD02N50C3
DS(on)
8 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
0.5
1.5
2.5
3.5
4.5
5.5
