SPB80P06P ,SIPMOS® Parametric SearchFeaturesProduct Summary• P-ChannelDrain source voltage V -60 VDS• Enhancement modeDrain-source on-s ..
SPB80P06PG , SIPMOSÒ Power-Transistor Features Enhancement mode Avalanche rated
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SPB80P06P
SIPMOS® Parametric Search
SPP80P06P
SPB80P06P
SIPMOS Power-Transistor
Features P-Channel Enhancement mode Avalanche rated dv/dt rated175°C operating temperature
Product Summary
Pin 1PIN 2/4PIN 3DS
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
SPP80P06P
SPB80P06P
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
SPP80P06P
SPB80P06P
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Dynamic Characteristics
SPP80P06P
SPB80P06P
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Dynamic Characteristics
Reverse Diode
SPP80P06P
SPB80P06P
Drain currentD = f (TC)
parameter: V‡ 10 V
-10
-20
-30
-40
-50
-60
-70
-90
Power dissipationtot = f (TC)
40
80
120
160
200
240
280
360
tot
Transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-5 10
-4 10
-3 10
-2 10
-1 10 10 10
thJC
Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C-10 -10 -10 -10
SPP80P06P
SPB80P06P
Typ. drain-source-on-resistanceDS(on) = f (ID)
parameter: V
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
0.055
0.060
0.075
DS(on)
Typ. output characteristicD = f (VDS); Tj=25°C
parameter: t= 80 μs-1-2-3-4-5-6-7-8-10
-20
-40
-60
-80
-100
-120
-140
-160
-190
Typ. transfer characteristics ID= f ( VGS )DS‡ 2 x ID x RDS(on)max
parameter: tp = 80 μs
-10
-20
-30
-40
-50
-60
-80
Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
15
20
25
30
35
40
50
