SPB80N06S2L-11 ,N-Channel OptiMOS Power TransistorFeatureV55 VDS
SPB80N06S2L-11
N-Channel OptiMOS Power Transistor
SPP80N06S2L-11
SPB80N06S2L-11Preliminary data
OptiMOS-
=Power-Transistor
Product Summary
Feature N-Channel Enhancement mode Logic Level175°C operating temperature Avalanche rated dv/dt rated
P-TO263-3-2P-TO220-3-1
SPP80N06S2L-11
SPB80N06S2L-11Preliminary data
Thermal Characteristics
Characteristics
Static Characteristics
SPP80N06S2L-11
SPB80N06S2L-11Preliminary data
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
SPP80N06S2L-11
SPB80N06S2L-11Preliminary data
1 Power dissipationtot = f (TC)
20
40
60
80
100
120
160 SPP80N06S2L-11
tot
2 Drain currentD = f (TC)
parameter: VGS 10 V
10
20
30
40
50
60
70
90 SPP80N06S2L-11
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
SPP80N06S2L-11
4 Transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-5 10
-4 10
-3 10
-2 10
-1 10 10
SPP80N06S2L-11
thJC
SPP80N06S2L-11
SPB80N06S2L-11Preliminary data
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs2468
20
40
60
80
100
120
140
160
190 SPP80N06S2L-11
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
12
16
20
24
28
36
SPP80N06S2L-11
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS- 2 x ID x RDS(on)max
parameter: tp = 80 µs
20
40
60
80
100
120
160
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
20
30
40
50
60
70
90
SPP80N06S2L-11
SPB80N06S2L-11Preliminary data
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 40 A, VGS = 10 V
12
16
20
24
28
36
SPP80N06S2L-11
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
0.4
0.8
1.2
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T10 10 10 10
SPP80N06S2L-11
