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Partno	Mfg	Dc	Qty	Available	Descript
SPP80N03S2L-04 |SPP80N03S2L04	INFINEON	N/a	272	avai	Low Voltage MOSFETs
SPB80N03S2L-04 |SPB80N03S2L04	Infineon	N/a	4800	avai	Low Voltage MOSFETs

SPB80N03S2L-04 ,Low Voltage MOSFETsFeatureV 30 VDS· N-ChannelR max. SMD version 3.9 mWDS(on)· Enhancement modeI 80 AD· Logic LevelP- T ..
SPB80N03S2L-05 ,Low Voltage MOSFETsFeatureV 30 VDS· N-ChannelR 5.2 mWDS(on)· Enhancement modeI 80 AD· Logic LevelP- TO262 -3-1 P- TO26 ..
SPB80N03S2L-06 ,Low Voltage MOSFETsFeatureV30 VDS· N-ChannelR max. SMD version 5.9 mWDS(on)· Enhancement modeI 80 AD· Logic LevelP- TO ..
SPB80N04S2-04 ,OptiMOS Power-TransistorFeatureV40 VDS• N-ChannelR max. SMD version 3.4 mΩDS(on)• Enhancement modeI 80 AD• 175°C operating ..
SPB80N04S2L-03 ,OptiMOS Power-TransistorCharacteristics40 - - VDrain-source breakdown voltage V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thresh ..
SPB80N06S2-05 ,N-Channel OptiMOS Power TransistorFeaturesProduct Summary• N-Channel Drain source voltage 55 VVDS• Enhancement modeDrain-source on-st ..
SST39SF040-70-4C-WH , 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF040-70-4I-NHE , 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF512-70-4C-NHE , 512 Kbit / 1 Mbit (x8) Multi-Purpose Flash
SST39SF512-70-4C-PH , 512 Kbit / 1 Mbit (x8) Multi-Purpose Flash
SST39SF512-70-4I-NH , 512 Kbit / 1 Mbit (x8) Multi-Purpose Flash
SST39SF512-70-4I-WH , 512 Kbit / 1 Mbit (x8) Multi-Purpose Flash

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SPB80N03S2L-04-SPP80N03S2L-04
Low Voltage MOSFETs
SPI80N03S2L-04
SPP80N03S2L-04,SPB80N03S2L-04
OptiMOSâ Power-Transistor
Product Summary
Feature
· N-Channel
· Enhancement mode
· Logic Level
· Excellent Gate Charge x RDS(on)
product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
P- TO263 -3-2P- TO262 -3-1P- TO220 -3-1
SPI80N03S2L-04
SPP80N03S2L-04,SPB80N03S2L-04
Thermal Characteristics
Characteristics
Static Characteristics
1Current limited by bondwire ; with an RthJC = 0.8K/W the chip is able to carry ID= 163A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
SPI80N03S2L-04
SPP80N03S2L-04,SPB80N03S2L-04
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
SPI80N03S2L-04
SPP80N03S2L-04,SPB80N03S2L-04
1 Power dissipation
Ptot = f (TC)
parameter: VGS³ 4 V
20
40
60
80
100
120
140
160
200
SPP80N03S2L-04
tot
2 Drain current
ID = f (TC)
parameter: VGS³ 10 V
10
20
30
40
50
60
70
90
SPP80N03S2L-04
4 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
-5 10
-4 10
-3 10
-2 10
-1 10 10
SPP80N03S2L-04
thJC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
SPP80N03S2L-04
SPI80N03S2L-04
SPP80N03S2L-04,SPB80N03S2L-04
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
20
40
60
80
100
120
140
160
190
SPP80N03S2L-04
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
10
11
12
14
SPP80N03S2L-04
DS(on)
7 Typ. transfer characteristics
ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
20
40
60
80
100
120
160
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
15
20
25
35
SPI80N03S2L-04
SPP80N03S2L-04,SPB80N03S2L-04
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 80 A, VGS = 10 V
10
SPP80N03S2L-04
DS(on)
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs10 10 10 10
SPP80N03S2L-04

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