SPP80N03L ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 30 VVDS• N channelDrain-Source on-state resistance 0.006R Ω• Enhanceme ..
SPP80N03S2L-03 ,Low Voltage MOSFETsDynamic CharacteristicsTransconductance g V ³2*I *R , 93 185 - Sfs DS D DS(on)maxI =80ADInput capac ..
SPP80N03S2L-04 ,Low Voltage MOSFETsCharacteristics30 - - VDrain-source breakdown voltage V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thresh ..
SPP80N06S-08 ,TO220/262/263; 80 A; 55V; NL; 8 mOhmFeaturesV 55 VDS• N-channel - Enhancement modeR (SMD version) 7.7mΩDS(on),max• Automotive AEC Q101 ..
SPP80N06S2-09 ,N-Channel OptiMOS Power TransistorFeatureV55 VDS
SPB80N03L-SPP80N03L
N-Channel SIPMOS Power Transistor
SPP80N03L
SIPMOS Power Transistor
Product Summary
Features• N channel
• Enhancement mode
• Avalanche rated
• Logic Level
• dv/dt rated
• 175°C operating temperature
Pin 1Pin 2Pin 3DS
SPP80N03L
Thermal Characteristics
Characteristics
Static Characteristicscurrent limited by bond wire Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70μm thick) copper area for drain
connection. PCB is vertical without blown air.
SPP80N03L
Dynamic Characteristics
SPP80N03L
Dynamic Characteristics
Reverse Diode
SPP80N03L
Power Dissipationtot = f (TC)
40
80
120
160
200
240
320
tot
Drain currentD = f (TC)
parameter: VGS ≥ 10 V
10
20
30
40
50
60
70
90
Transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-5 10
-4 10
-3 10
-2 10
-1 10 10
thJC
Safe operating areaD = f (VDS)
parameter : D = 0 , TC = 25 °C10 10 10
SPP80N03L
Typ. output characteristicsD = f (VDS)
parameter: tp = 80 μs
20
40
60
80
100
120
140
160
190
Typ. drain-source-on-resistanceDS(on) = f (ID)
parameter: VGS
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
0.022
0.026
DS(on)
Typ. transfer characteristics ID= f (VGS)
parameter: tp = 80 μsDS ≥ 2 x ID x RDS(on)max
10
20
30
40
50
70
Typ. forward transconductancefs = f(ID); Tj = 25°C
parameter: gfs
10
20
30
40
50
60
70
80
100
