SPB35N10 ,Low Voltage MOSFETsFeatureV100 VDS
SPB35N10
Low Voltage MOSFETs
Preliminary dataSPI35N10
SPP35N10,SPB35N10
SIPMOS Power-Transistor
Product Summary
Feature N-Channel Enhancement mode175°C operating temperature Avalanche rated dv/dt rated
P-TO263-3-2P-TO220-3-1P-TO262-3-1
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Preliminary dataSPI35N10
SPP35N10,SPB35N10
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
Preliminary dataSPI35N10
SPP35N10,SPB35N10
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataSPI35N10
SPP35N10,SPB35N10
1 Power dissipationtot = f (TC)
20
40
60
80
100
120
160 SPP35N10
tot
2 Drain currentD = f (TC)
parameter: VGS 10 V
12
16
20
24
28
32
38 SPP35N10
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
SPP35N10
4 Transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
Preliminary dataSPI35N10
SPP35N10,SPB35N10
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
20
30
40
50
60
70
90
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
100
200
300
500
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS- 2 x ID x RDS(on)max
parameter: tp = 80 µs
10
20
30
40
60
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
12
14
16
18
20
Preliminary dataSPI35N10
SPP35N10,SPB35N10
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 26.4 A, VGS = 10 V
20
40
60
80
100
120
140
160 SPP35N10
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
1.5
2.5
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T10 10 10 10
SPP35N10
