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SPP30N03infineonN/a20000avaiN-Channel SIPMOS Power Transistor
SPB30N03InfineonN/a4800avaiN-Channel SIPMOS Power Transistor


SPP30N03 ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 30 VVDS• N channelDrain-Source on-state resistance 0.023R Ω• Enhanceme ..
SPP30N03L ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage 30 - - VV(BR)DSSV = 0 V, I = 0.25 mA, T = 25 °CGS D ..
SPP30N03L ,N-Channel SIPMOS Power TransistorCharacteristicsThermal resistance, junction - case - - 2 K/WRthJC Thermal resistance, junction - am ..
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SPP35N10 ,N-Channel SIPMOS Power TransistorFeatureV 100 VDS• N-ChannelR 45 mΩDS(on)• Enhancement modeI 35 AD•=175°C operating temperatureP-TO2 ..
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SPB30N03-SPP30N03
N-Channel SIPMOS Power Transistor
( Infineon
technologies
SIPMOS® Power Transistor
Features
q N channel
. Enhancement mode
. Avalanche rated
. d v/dt rated
. 175°C operating temperature
SPP 30N03
Product Summary
Drain source voltage VDS 30 V
Drain-Source on-state resistance RDS(on) 0.023 n
Continuous drain current ID 30 A
VPT051 64
VPT05155
Type Package Ordering Code Packaging Pin 1 Pin 2 Pin 3
SPP30N03 P-TO220-3-1 Q67040-S4736-A2 Tube G D S
SPB30N03 P-T0263-3-2 Q67040-S4736-A3 Tape and Reel
Maximum Ratings, at Ti = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 "C, 1) 30
TC = 100 ''C 30
Pulsed drain current leuIse 120
TC = 25 (
Avalanche energy, single pulse EAS 145 m]
ho = 30A, VDD=25V, RGS=25Q
Avalanche energy, periodic limited by Timax EAR 7.5
Reverse diode dv/dt dv/dt 6 kV/ps
ls = 30 A, VDS = 24 V, di/dt= 200 Alps,
Tmax = 175 (
Gate source voltage VGS :20 V
Power dissipation Ptot 75 W
TC = 25 (
Operating and storage temperature Ti, Tsta -55... +175 (
IEC climatic category; DIN IEC 68-1 55/175/56
Data Sheet
Infineon SPP 30N03
technologies/
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - 2 KNV
Thermal resistance, junction - ambient, leded RthJA - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling area2) - - 40
Electrical Characteristics, at Ti = 25 ''C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 30 - - V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = bbs VGS(th) 2.1 3 4
ID = 50 pA
Zero gate voltage drain current IDSS pA
1hos=30v,v'Gs=0v,Tj=25oC 0.1 1
VDS=30V,VGS=0V, Tj=150°C - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, VDS=0V
Drain-Source on-state resistance RDS(on) £2
VGS = 10 V, ID = 30 A - 0.014 0.023
1current limited by bond wire
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2 05.99
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